Radiation impact of swift heavy ion beams on double-interface CoFeB/MgO magnetic tunnel junctions

A double-interface CoFeB/MgO magnetic tunnel junction (MTJ) has a high thermal stability barrier (E) and high-efficiency magnetization switching with the scaling of device dimensions. However, compared to a single-interface CoFeB/MgO MTJ, its more complicated film stacks and interfaces are more vuln...

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Veröffentlicht in:Applied physics letters 2020-04, Vol.116 (17)
Hauptverfasser: Wang, Bi, Wang, Zhaohao, Du, Ao, Qiang, You, Cao, Kaihua, Zhao, Yuanfu, Zheng, Hongchao, Yan, Shaohua, Zhai, Pengfei, Liu, Jie, Guo, Gang, Bai, Yumeng, Wang, Jun, Zhao, Weisheng
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Sprache:eng
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Zusammenfassung:A double-interface CoFeB/MgO magnetic tunnel junction (MTJ) has a high thermal stability barrier (E) and high-efficiency magnetization switching with the scaling of device dimensions. However, compared to a single-interface CoFeB/MgO MTJ, its more complicated film stacks and interfaces are more vulnerable to irradiation-induced swift heavy ions. We have studied the irradiation effects of Ta/Kr ions on double-interface CoFeB/MgO MTJs. Structural and physical analyses are performed through transmission electron microscopy, energy dispersive x-ray spectroscopy, and vibrating sample magnetometry. 1907 MeV Ta-ion irradiation damages the interfaces of the double-interface MTJ, resulting in the irreversible decrease in coercivity, while 2060 MeV Kr-ion irradiation damages the bulk properties of the MTJ, leading to the decrease in saturation magnetization. However, the electronic properties of the double-interface MTJ are almost immune to Kr-ion irradiation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5145124