Lateral Inhomogeneities of Sapphire Plates Determined with the Aid of X-Ray and Probe Methods
X-ray diffractometry, X-ray profilometry, atomic-force microscopy, and sclerometer tests are employed in the study of R -cut plates of sapphire single crystals grown with the aid of the Kyropoulos technique and used as substrates for the silicon-on-sapphire structures. Regions with different degrees...
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| Veröffentlicht in: | Technical physics 2020-03, Vol.65 (3), p.400-406 |
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| creator | Asadchikov, V. E. Blagov, A. E. Butashin, A. V. Volkov, Yu. O. Deryabin, A. N. Kanevskii, V. M. Muslimov, A. E. Protsenko, A. I. Roshchin, B. S. Targonskii, A. V. Chukhovskii, F. N. |
| description | X-ray diffractometry, X-ray profilometry, atomic-force microscopy, and sclerometer tests are employed in the study of
R
-cut plates of sapphire single crystals grown with the aid of the Kyropoulos technique and used as substrates for the silicon-on-sapphire structures. Regions with different degrees of perfection can be found even on a single plate. Mutually consistent results of the four experimental methods based on different physical principles can be used to reveal regions of structural imperfection on the surface of a plate. It is expedient to employ a complex procedure for multipoint monitoring of the parameters of plates to reduce the number of defect samples that serve as substrates in the production of electronic devices. |
| doi_str_mv | 10.1134/S1063784220030020 |
| format | Article |
| fullrecord | <record><control><sourceid>gale_proqu</sourceid><recordid>TN_cdi_proquest_journals_2394928781</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A622096179</galeid><sourcerecordid>A622096179</sourcerecordid><originalsourceid>FETCH-LOGICAL-c355t-b538437bf4665270ce3423d346f7b0fd345810eec57e83ee2f4f2634b9d195ae3</originalsourceid><addsrcrecordid>eNp1kF1LwzAUhosoOKc_wLuA19V8t70c82swcTgFb6Sk7cma0TYz6ZD9e1MqeCGSixzOeZ7k8EbRJcHXhDB-syZYsiTllGLMMKb4KJoQnOFYCiqOh1qyeJifRmfebzEmJBVyEn0sVQ9ONWjR1ba1G-jA9AY8shqt1W5XGwdo1QTIo1sIaGs6qNCX6WvU14BmphrQ9_hFHZDqKrRytgD0BH1tK38enWjVeLj4uafR2_3d6_wxXj4_LOazZVwyIfq4ECzlLCk0l2HdBJfAOGUV41InBdahECnBAKVIIGUAVHNNJeNFVpFMKGDT6Gp8d-fs5x58n2_t3nXhy5yyjGc0TVISqOuR2qgGctNp2ztVhlNBa0rbgTahP5Mhw0ySJAsCGYXSWe8d6HznTKvcISc4H2LP_8QeHDo6PrDdBtzvKv9L3zg7ggY</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2394928781</pqid></control><display><type>article</type><title>Lateral Inhomogeneities of Sapphire Plates Determined with the Aid of X-Ray and Probe Methods</title><source>SpringerLink Journals</source><creator>Asadchikov, V. E. ; Blagov, A. E. ; Butashin, A. V. ; Volkov, Yu. O. ; Deryabin, A. N. ; Kanevskii, V. M. ; Muslimov, A. E. ; Protsenko, A. I. ; Roshchin, B. S. ; Targonskii, A. V. ; Chukhovskii, F. N.</creator><creatorcontrib>Asadchikov, V. E. ; Blagov, A. E. ; Butashin, A. V. ; Volkov, Yu. O. ; Deryabin, A. N. ; Kanevskii, V. M. ; Muslimov, A. E. ; Protsenko, A. I. ; Roshchin, B. S. ; Targonskii, A. V. ; Chukhovskii, F. N.</creatorcontrib><description>X-ray diffractometry, X-ray profilometry, atomic-force microscopy, and sclerometer tests are employed in the study of
R
-cut plates of sapphire single crystals grown with the aid of the Kyropoulos technique and used as substrates for the silicon-on-sapphire structures. Regions with different degrees of perfection can be found even on a single plate. Mutually consistent results of the four experimental methods based on different physical principles can be used to reveal regions of structural imperfection on the surface of a plate. It is expedient to employ a complex procedure for multipoint monitoring of the parameters of plates to reduce the number of defect samples that serve as substrates in the production of electronic devices.</description><identifier>ISSN: 1063-7842</identifier><identifier>EISSN: 1090-6525</identifier><identifier>DOI: 10.1134/S1063784220030020</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Atomic force microscopy ; Classical and Continuum Physics ; Crystal growth ; Electronic devices ; Physical Science of Materials ; Physics ; Physics and Astronomy ; Plates ; Sapphire ; Silicon substrates ; Single crystals</subject><ispartof>Technical physics, 2020-03, Vol.65 (3), p.400-406</ispartof><rights>Pleiades Publishing, Ltd. 2020</rights><rights>COPYRIGHT 2020 Springer</rights><rights>Pleiades Publishing, Ltd. 2020.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-b538437bf4665270ce3423d346f7b0fd345810eec57e83ee2f4f2634b9d195ae3</citedby><cites>FETCH-LOGICAL-c355t-b538437bf4665270ce3423d346f7b0fd345810eec57e83ee2f4f2634b9d195ae3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063784220030020$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063784220030020$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Asadchikov, V. E.</creatorcontrib><creatorcontrib>Blagov, A. E.</creatorcontrib><creatorcontrib>Butashin, A. V.</creatorcontrib><creatorcontrib>Volkov, Yu. O.</creatorcontrib><creatorcontrib>Deryabin, A. N.</creatorcontrib><creatorcontrib>Kanevskii, V. M.</creatorcontrib><creatorcontrib>Muslimov, A. E.</creatorcontrib><creatorcontrib>Protsenko, A. I.</creatorcontrib><creatorcontrib>Roshchin, B. S.</creatorcontrib><creatorcontrib>Targonskii, A. V.</creatorcontrib><creatorcontrib>Chukhovskii, F. N.</creatorcontrib><title>Lateral Inhomogeneities of Sapphire Plates Determined with the Aid of X-Ray and Probe Methods</title><title>Technical physics</title><addtitle>Tech. Phys</addtitle><description>X-ray diffractometry, X-ray profilometry, atomic-force microscopy, and sclerometer tests are employed in the study of
R
-cut plates of sapphire single crystals grown with the aid of the Kyropoulos technique and used as substrates for the silicon-on-sapphire structures. Regions with different degrees of perfection can be found even on a single plate. Mutually consistent results of the four experimental methods based on different physical principles can be used to reveal regions of structural imperfection on the surface of a plate. It is expedient to employ a complex procedure for multipoint monitoring of the parameters of plates to reduce the number of defect samples that serve as substrates in the production of electronic devices.</description><subject>Atomic force microscopy</subject><subject>Classical and Continuum Physics</subject><subject>Crystal growth</subject><subject>Electronic devices</subject><subject>Physical Science of Materials</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Plates</subject><subject>Sapphire</subject><subject>Silicon substrates</subject><subject>Single crystals</subject><issn>1063-7842</issn><issn>1090-6525</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp1kF1LwzAUhosoOKc_wLuA19V8t70c82swcTgFb6Sk7cma0TYz6ZD9e1MqeCGSixzOeZ7k8EbRJcHXhDB-syZYsiTllGLMMKb4KJoQnOFYCiqOh1qyeJifRmfebzEmJBVyEn0sVQ9ONWjR1ba1G-jA9AY8shqt1W5XGwdo1QTIo1sIaGs6qNCX6WvU14BmphrQ9_hFHZDqKrRytgD0BH1tK38enWjVeLj4uafR2_3d6_wxXj4_LOazZVwyIfq4ECzlLCk0l2HdBJfAOGUV41InBdahECnBAKVIIGUAVHNNJeNFVpFMKGDT6Gp8d-fs5x58n2_t3nXhy5yyjGc0TVISqOuR2qgGctNp2ztVhlNBa0rbgTahP5Mhw0ySJAsCGYXSWe8d6HznTKvcISc4H2LP_8QeHDo6PrDdBtzvKv9L3zg7ggY</recordid><startdate>20200301</startdate><enddate>20200301</enddate><creator>Asadchikov, V. E.</creator><creator>Blagov, A. E.</creator><creator>Butashin, A. V.</creator><creator>Volkov, Yu. O.</creator><creator>Deryabin, A. N.</creator><creator>Kanevskii, V. M.</creator><creator>Muslimov, A. E.</creator><creator>Protsenko, A. I.</creator><creator>Roshchin, B. S.</creator><creator>Targonskii, A. V.</creator><creator>Chukhovskii, F. N.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20200301</creationdate><title>Lateral Inhomogeneities of Sapphire Plates Determined with the Aid of X-Ray and Probe Methods</title><author>Asadchikov, V. E. ; Blagov, A. E. ; Butashin, A. V. ; Volkov, Yu. O. ; Deryabin, A. N. ; Kanevskii, V. M. ; Muslimov, A. E. ; Protsenko, A. I. ; Roshchin, B. S. ; Targonskii, A. V. ; Chukhovskii, F. N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-b538437bf4665270ce3423d346f7b0fd345810eec57e83ee2f4f2634b9d195ae3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Atomic force microscopy</topic><topic>Classical and Continuum Physics</topic><topic>Crystal growth</topic><topic>Electronic devices</topic><topic>Physical Science of Materials</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Plates</topic><topic>Sapphire</topic><topic>Silicon substrates</topic><topic>Single crystals</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Asadchikov, V. E.</creatorcontrib><creatorcontrib>Blagov, A. E.</creatorcontrib><creatorcontrib>Butashin, A. V.</creatorcontrib><creatorcontrib>Volkov, Yu. O.</creatorcontrib><creatorcontrib>Deryabin, A. N.</creatorcontrib><creatorcontrib>Kanevskii, V. M.</creatorcontrib><creatorcontrib>Muslimov, A. E.</creatorcontrib><creatorcontrib>Protsenko, A. I.</creatorcontrib><creatorcontrib>Roshchin, B. S.</creatorcontrib><creatorcontrib>Targonskii, A. V.</creatorcontrib><creatorcontrib>Chukhovskii, F. N.</creatorcontrib><collection>CrossRef</collection><jtitle>Technical physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Asadchikov, V. E.</au><au>Blagov, A. E.</au><au>Butashin, A. V.</au><au>Volkov, Yu. O.</au><au>Deryabin, A. N.</au><au>Kanevskii, V. M.</au><au>Muslimov, A. E.</au><au>Protsenko, A. I.</au><au>Roshchin, B. S.</au><au>Targonskii, A. V.</au><au>Chukhovskii, F. N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Lateral Inhomogeneities of Sapphire Plates Determined with the Aid of X-Ray and Probe Methods</atitle><jtitle>Technical physics</jtitle><stitle>Tech. Phys</stitle><date>2020-03-01</date><risdate>2020</risdate><volume>65</volume><issue>3</issue><spage>400</spage><epage>406</epage><pages>400-406</pages><issn>1063-7842</issn><eissn>1090-6525</eissn><abstract>X-ray diffractometry, X-ray profilometry, atomic-force microscopy, and sclerometer tests are employed in the study of
R
-cut plates of sapphire single crystals grown with the aid of the Kyropoulos technique and used as substrates for the silicon-on-sapphire structures. Regions with different degrees of perfection can be found even on a single plate. Mutually consistent results of the four experimental methods based on different physical principles can be used to reveal regions of structural imperfection on the surface of a plate. It is expedient to employ a complex procedure for multipoint monitoring of the parameters of plates to reduce the number of defect samples that serve as substrates in the production of electronic devices.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063784220030020</doi><tpages>7</tpages></addata></record> |
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| subjects | Atomic force microscopy Classical and Continuum Physics Crystal growth Electronic devices Physical Science of Materials Physics Physics and Astronomy Plates Sapphire Silicon substrates Single crystals |
| title | Lateral Inhomogeneities of Sapphire Plates Determined with the Aid of X-Ray and Probe Methods |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T12%3A09%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_proqu&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Lateral%20Inhomogeneities%20of%20Sapphire%20Plates%20Determined%20with%20the%20Aid%20of%20X-Ray%20and%20Probe%20Methods&rft.jtitle=Technical%20physics&rft.au=Asadchikov,%20V.%20E.&rft.date=2020-03-01&rft.volume=65&rft.issue=3&rft.spage=400&rft.epage=406&rft.pages=400-406&rft.issn=1063-7842&rft.eissn=1090-6525&rft_id=info:doi/10.1134/S1063784220030020&rft_dat=%3Cgale_proqu%3EA622096179%3C/gale_proqu%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2394928781&rft_id=info:pmid/&rft_galeid=A622096179&rfr_iscdi=true |