Lateral Inhomogeneities of Sapphire Plates Determined with the Aid of X-Ray and Probe Methods

X-ray diffractometry, X-ray profilometry, atomic-force microscopy, and sclerometer tests are employed in the study of R -cut plates of sapphire single crystals grown with the aid of the Kyropoulos technique and used as substrates for the silicon-on-sapphire structures. Regions with different degrees...

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Veröffentlicht in:Technical physics 2020-03, Vol.65 (3), p.400-406
Hauptverfasser: Asadchikov, V. E., Blagov, A. E., Butashin, A. V., Volkov, Yu. O., Deryabin, A. N., Kanevskii, V. M., Muslimov, A. E., Protsenko, A. I., Roshchin, B. S., Targonskii, A. V., Chukhovskii, F. N.
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Sprache:eng
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Zusammenfassung:X-ray diffractometry, X-ray profilometry, atomic-force microscopy, and sclerometer tests are employed in the study of R -cut plates of sapphire single crystals grown with the aid of the Kyropoulos technique and used as substrates for the silicon-on-sapphire structures. Regions with different degrees of perfection can be found even on a single plate. Mutually consistent results of the four experimental methods based on different physical principles can be used to reveal regions of structural imperfection on the surface of a plate. It is expedient to employ a complex procedure for multipoint monitoring of the parameters of plates to reduce the number of defect samples that serve as substrates in the production of electronic devices.
ISSN:1063-7842
1090-6525
DOI:10.1134/S1063784220030020