The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

Herein, the effect of crystal quality of AlN buffer layer on AlGaN/GaN/AlN double‐heterostructure high‐electron‐mobility transistor (DH‐HEMT) is investigated. The material quality of the GaN channel and the AlGaN barriers, such as the dislocation density and the interface roughness, deteriorates, and the 2D electron gas (2DEG) mobility decreases as the threading dislocation density (TDD) of the AlN buffer increases. It is also revealed that the thickness and the Al mole fraction of the AlGaN barrier are affected by the strain variation of the GaN channel depending on the TDD of the AlN buffer. The variation of the compressive strain of the GaN channel is responsible for the 2DEG density change by affecting the barrier condition and the piezoelectric polarization charge. Low‐temperature Hall effect measurement reveals that the interface roughness scattering is a dominant factor for the mobility of the DH‐HEMT, which is ≈2–6 × 103 cm2 (V s)−1. The effects of the AlN quality on structural and electrical characteristics of double‐heterostructure high‐electron‐mobility transistor (DH‐HEMT) are investigated. The AlGaN/GaN/AlN DH‐HEMT structure on an AlN template with different threading dislocation densities (TDDs) is grown on a sapphire substrate using metal‐organic chemical vapor deposition (MOCVD). The structural and electrical properties of DH‐HEMT structures with a different AlN buffer TDD are characterized.