Field emission behaviors of CsPbI3 nanobelts

In the present study, the field emission (FE) behaviors of CsPbI3 nanobelts were reported, which were synthesized via a one-step facile solvothermal method. The obtained CsPbI3 nanobelts were single crystalline in nature with a typical growth direction along [100]. It was disclosed that the valence...

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Veröffentlicht in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2020-04, Vol.8 (15), p.5156-5162
Hauptverfasser: Du, Zhentao, Jiang, Fulin, Zheng, Jinju, Chen, Shanliang, Gao, Fengmei, Teng, Jie, Fu, Dingfa, Zhang, Hui, Yang, Weiyou
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container_issue 15
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container_title Journal of materials chemistry. C, Materials for optical and electronic devices
container_volume 8
creator Du, Zhentao
Jiang, Fulin
Zheng, Jinju
Chen, Shanliang
Gao, Fengmei
Teng, Jie
Fu, Dingfa
Zhang, Hui
Yang, Weiyou
description In the present study, the field emission (FE) behaviors of CsPbI3 nanobelts were reported, which were synthesized via a one-step facile solvothermal method. The obtained CsPbI3 nanobelts were single crystalline in nature with a typical growth direction along [100]. It was disclosed that the valence band maximum (VBM) and conduction band minimum (CBM) vs. vacuum level of the CsPbI3 nanobelts were located at −4.86 and −2.16 eV, respectively, and their work function (Φ) was calculated to be of 3.56 eV. The as-grown CsPbI3 nanobelts exhibited outstanding field emission (FE) characteristics with a low turn-on field (Eto) of ∼2.62 V μm−1 and a high field enhancement factor of 3553, representing their potential applications in field emission display devices.
doi_str_mv 10.1039/d0tc00005a
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subjects Conduction bands
Display devices
Emission analysis
Field emission
Valence band
Work functions
title Field emission behaviors of CsPbI3 nanobelts
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