Field emission behaviors of CsPbI3 nanobelts
In the present study, the field emission (FE) behaviors of CsPbI3 nanobelts were reported, which were synthesized via a one-step facile solvothermal method. The obtained CsPbI3 nanobelts were single crystalline in nature with a typical growth direction along [100]. It was disclosed that the valence...
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Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2020-04, Vol.8 (15), p.5156-5162 |
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container_title | Journal of materials chemistry. C, Materials for optical and electronic devices |
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creator | Du, Zhentao Jiang, Fulin Zheng, Jinju Chen, Shanliang Gao, Fengmei Teng, Jie Fu, Dingfa Zhang, Hui Yang, Weiyou |
description | In the present study, the field emission (FE) behaviors of CsPbI3 nanobelts were reported, which were synthesized via a one-step facile solvothermal method. The obtained CsPbI3 nanobelts were single crystalline in nature with a typical growth direction along [100]. It was disclosed that the valence band maximum (VBM) and conduction band minimum (CBM) vs. vacuum level of the CsPbI3 nanobelts were located at −4.86 and −2.16 eV, respectively, and their work function (Φ) was calculated to be of 3.56 eV. The as-grown CsPbI3 nanobelts exhibited outstanding field emission (FE) characteristics with a low turn-on field (Eto) of ∼2.62 V μm−1 and a high field enhancement factor of 3553, representing their potential applications in field emission display devices. |
doi_str_mv | 10.1039/d0tc00005a |
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The obtained CsPbI3 nanobelts were single crystalline in nature with a typical growth direction along [100]. It was disclosed that the valence band maximum (VBM) and conduction band minimum (CBM) vs. vacuum level of the CsPbI3 nanobelts were located at −4.86 and −2.16 eV, respectively, and their work function (Φ) was calculated to be of 3.56 eV. The as-grown CsPbI3 nanobelts exhibited outstanding field emission (FE) characteristics with a low turn-on field (Eto) of ∼2.62 V μm−1 and a high field enhancement factor of 3553, representing their potential applications in field emission display devices.</description><identifier>ISSN: 2050-7526</identifier><identifier>EISSN: 2050-7534</identifier><identifier>DOI: 10.1039/d0tc00005a</identifier><language>eng</language><publisher>Cambridge: Royal Society of Chemistry</publisher><subject>Conduction bands ; Display devices ; Emission analysis ; Field emission ; Valence band ; Work functions</subject><ispartof>Journal of materials chemistry. 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The as-grown CsPbI3 nanobelts exhibited outstanding field emission (FE) characteristics with a low turn-on field (Eto) of ∼2.62 V μm−1 and a high field enhancement factor of 3553, representing their potential applications in field emission display devices.</description><subject>Conduction bands</subject><subject>Display devices</subject><subject>Emission analysis</subject><subject>Field emission</subject><subject>Valence band</subject><subject>Work functions</subject><issn>2050-7526</issn><issn>2050-7534</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNo9jU9LAzEUxIMoWGovfoKAV1eTvOxrcpTF2kLBHuq55M-Lblk3utn6-V1RnMvM4TczjF1LcScF2PsoxiAm1e6MzZSoRbWsQZ__Z4WXbFHK8YcxEg3aGbtdtdRFTu9tKW3uuac399XmofCceFN2fgO8d3321I3lil0k1xVa_Pmcvawe98262j4_bZqHbfWqlBir6DAqqJeSMKLXgC4Io3UEjzJKn7wl1CYIDcFIa0gla1F7SikG40KEObv53f0Y8ueJyng45tPQT5cHBVZoA1MXvgEPOkP3</recordid><startdate>20200421</startdate><enddate>20200421</enddate><creator>Du, Zhentao</creator><creator>Jiang, Fulin</creator><creator>Zheng, Jinju</creator><creator>Chen, Shanliang</creator><creator>Gao, Fengmei</creator><creator>Teng, Jie</creator><creator>Fu, Dingfa</creator><creator>Zhang, Hui</creator><creator>Yang, Weiyou</creator><general>Royal Society of Chemistry</general><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20200421</creationdate><title>Field emission behaviors of CsPbI3 nanobelts</title><author>Du, Zhentao ; Jiang, Fulin ; Zheng, Jinju ; Chen, Shanliang ; Gao, Fengmei ; Teng, Jie ; Fu, Dingfa ; Zhang, Hui ; Yang, Weiyou</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-g220t-da6d23571e6d6b436ac0844d3b61d1bfb9e648c043c8198e2f9964beffdc8acd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Conduction bands</topic><topic>Display devices</topic><topic>Emission analysis</topic><topic>Field emission</topic><topic>Valence band</topic><topic>Work functions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Du, Zhentao</creatorcontrib><creatorcontrib>Jiang, Fulin</creatorcontrib><creatorcontrib>Zheng, Jinju</creatorcontrib><creatorcontrib>Chen, Shanliang</creatorcontrib><creatorcontrib>Gao, Fengmei</creatorcontrib><creatorcontrib>Teng, Jie</creatorcontrib><creatorcontrib>Fu, Dingfa</creatorcontrib><creatorcontrib>Zhang, Hui</creatorcontrib><creatorcontrib>Yang, Weiyou</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials chemistry. 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subjects | Conduction bands Display devices Emission analysis Field emission Valence band Work functions |
title | Field emission behaviors of CsPbI3 nanobelts |
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