Field emission behaviors of CsPbI3 nanobelts

Field emission behaviors of CsPbI3 nanobelts

In the present study, the field emission (FE) behaviors of CsPbI3 nanobelts were reported, which were synthesized via a one-step facile solvothermal method. The obtained CsPbI3 nanobelts were single crystalline in nature with a typical growth direction along [100]. It was disclosed that the valence...

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Veröffentlicht in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2020-04, Vol.8 (15), p.5156-5162
Hauptverfasser: Du, Zhentao, Jiang, Fulin, Zheng, Jinju, Chen, Shanliang, Gao, Fengmei, Teng, Jie, Fu, Dingfa, Zhang, Hui, Yang, Weiyou
Format: Artikel
Sprache:eng
Schlagworte:
Conduction bands
Display devices
Emission analysis
Field emission
Valence band
Work functions
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Zusammenfassung:In the present study, the field emission (FE) behaviors of CsPbI3 nanobelts were reported, which were synthesized via a one-step facile solvothermal method. The obtained CsPbI3 nanobelts were single crystalline in nature with a typical growth direction along [100]. It was disclosed that the valence band maximum (VBM) and conduction band minimum (CBM) vs. vacuum level of the CsPbI3 nanobelts were located at −4.86 and −2.16 eV, respectively, and their work function (Φ) was calculated to be of 3.56 eV. The as-grown CsPbI3 nanobelts exhibited outstanding field emission (FE) characteristics with a low turn-on field (Eto) of ∼2.62 V μm−1 and a high field enhancement factor of 3553, representing their potential applications in field emission display devices.
ISSN:2050-7526
2050-7534
DOI:10.1039/d0tc00005a