Narrow‐Band Thermal Emitter with Titanium Nitride Thin Film Demonstrating High Temperature Stability
A refractory wavelength selective thermal emitter is experimentally realized by the excitation of Tamm plasmon polaritons (TPPs) between a titanium nitride (TiN) thin film and a distributed Bragg reflector (DBR). The absorptance reaches nearly unity at ≈3.73 μm with the bandwidth of 0.36 μm in the e...
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creator | Yang, Zih‐Ying Ishii, Satoshi Doan, Anh Tung Shinde, Satish Laxman Dao, Thang Duy Lo, Yu‐Ping Chen, Kuo‐Ping Nagao, Tadaaki |
description | A refractory wavelength selective thermal emitter is experimentally realized by the excitation of Tamm plasmon polaritons (TPPs) between a titanium nitride (TiN) thin film and a distributed Bragg reflector (DBR). The absorptance reaches nearly unity at ≈3.73 μm with the bandwidth of 0.36 μm in the experiment. High temperature stabilities are confirmed up to 500 and 1000 °C in ambient and in vacuum, respectively. When the TiN TPP structure is compared to the TiN–insulator–TiN (TiN‐metal–insulator–metal (MIM)) structure, the former shows higher Q‐factor, which indicates the advantage of choosing the TiN TTP structure against the MIM structure. The proposed refractory TiN TPP structure is lithography‐free and scalable, which paves a way for large scale thermal emitters in practical usage.
The titanium nitride (TiN) thermal emitter based on Tamm plasmon polaritons (TPP) structure with a top oxide layer can achieve near perfect absorption and possess a narrow bandwidth. Via the heating process, the formation of the top thermally oxidized layer provides a protection to the structure. The property can be sustained even at 1000 °C for 5 h in vacuum. |
doi_str_mv | 10.1002/adom.201900982 |
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fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2390480847</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2390480847</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3172-2f413be34af9517456f7fa9170165ac0165720cdc1a57a2abcfba88c39e45b5d3</originalsourceid><addsrcrecordid>eNqFkL1OwzAUhS0EElXpymyJOcV2kjoeS38oUmkHymzdJHbrKk6K46jqxiPwjDwJiYqAjeX-6TvnSgehW0qGlBB2D3llh4xQQYhI2AXqMSrigBJOL__M12hQ13tCSLuEIuI9pFfgXHX8fP94gDLHm51yFgo8s8Z75fDR-B3eGA-laSxeGe9MrlrKlHhuCounylZl7R14U27xwmxbWtmDag-NU_jFQ2oK40836EpDUavBd--j1_lsM1kEy_Xj02S8DLKQchYwHdEwVWEEWsSUR_FIcw2CckJHMWRd5YxkeUYh5sAgzXQKSZKFQkVxGudhH92dfQ-uemtU7eW-alzZvpQsFCRKSBLxlhqeqcxVde2UlgdnLLiTpER2ccouTvkTZysQZ8HRFOr0Dy3H0_Xzr_YLnxF6wg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2390480847</pqid></control><display><type>article</type><title>Narrow‐Band Thermal Emitter with Titanium Nitride Thin Film Demonstrating High Temperature Stability</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Yang, Zih‐Ying ; Ishii, Satoshi ; Doan, Anh Tung ; Shinde, Satish Laxman ; Dao, Thang Duy ; Lo, Yu‐Ping ; Chen, Kuo‐Ping ; Nagao, Tadaaki</creator><creatorcontrib>Yang, Zih‐Ying ; Ishii, Satoshi ; Doan, Anh Tung ; Shinde, Satish Laxman ; Dao, Thang Duy ; Lo, Yu‐Ping ; Chen, Kuo‐Ping ; Nagao, Tadaaki</creatorcontrib><description>A refractory wavelength selective thermal emitter is experimentally realized by the excitation of Tamm plasmon polaritons (TPPs) between a titanium nitride (TiN) thin film and a distributed Bragg reflector (DBR). The absorptance reaches nearly unity at ≈3.73 μm with the bandwidth of 0.36 μm in the experiment. High temperature stabilities are confirmed up to 500 and 1000 °C in ambient and in vacuum, respectively. When the TiN TPP structure is compared to the TiN–insulator–TiN (TiN‐metal–insulator–metal (MIM)) structure, the former shows higher Q‐factor, which indicates the advantage of choosing the TiN TTP structure against the MIM structure. The proposed refractory TiN TPP structure is lithography‐free and scalable, which paves a way for large scale thermal emitters in practical usage.
The titanium nitride (TiN) thermal emitter based on Tamm plasmon polaritons (TPP) structure with a top oxide layer can achieve near perfect absorption and possess a narrow bandwidth. Via the heating process, the formation of the top thermally oxidized layer provides a protection to the structure. The property can be sustained even at 1000 °C for 5 h in vacuum.</description><identifier>ISSN: 2195-1071</identifier><identifier>EISSN: 2195-1071</identifier><identifier>DOI: 10.1002/adom.201900982</identifier><language>eng</language><publisher>Weinheim: Wiley Subscription Services, Inc</publisher><subject>Absorptance ; Absorptivity ; Emitters ; High temperature ; Materials science ; narrow‐band emission ; Optics ; Polaritons ; refractory materials ; Tamm plasmon polaritons ; thermal emission ; Thin films ; Titanium nitride ; titanium nitrides</subject><ispartof>Advanced optical materials, 2020-04, Vol.8 (8), p.n/a</ispartof><rights>2020 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3172-2f413be34af9517456f7fa9170165ac0165720cdc1a57a2abcfba88c39e45b5d3</citedby><cites>FETCH-LOGICAL-c3172-2f413be34af9517456f7fa9170165ac0165720cdc1a57a2abcfba88c39e45b5d3</cites><orcidid>0000-0001-5027-9079 ; 0000-0002-3291-7791 ; 0000-0001-6601-1464 ; 0000-0003-0731-8428 ; 0000-0002-6746-2686 ; 0000-0002-0353-3705 ; 0000-0001-6256-9145</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fadom.201900982$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fadom.201900982$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27903,27904,45553,45554</link.rule.ids></links><search><creatorcontrib>Yang, Zih‐Ying</creatorcontrib><creatorcontrib>Ishii, Satoshi</creatorcontrib><creatorcontrib>Doan, Anh Tung</creatorcontrib><creatorcontrib>Shinde, Satish Laxman</creatorcontrib><creatorcontrib>Dao, Thang Duy</creatorcontrib><creatorcontrib>Lo, Yu‐Ping</creatorcontrib><creatorcontrib>Chen, Kuo‐Ping</creatorcontrib><creatorcontrib>Nagao, Tadaaki</creatorcontrib><title>Narrow‐Band Thermal Emitter with Titanium Nitride Thin Film Demonstrating High Temperature Stability</title><title>Advanced optical materials</title><description>A refractory wavelength selective thermal emitter is experimentally realized by the excitation of Tamm plasmon polaritons (TPPs) between a titanium nitride (TiN) thin film and a distributed Bragg reflector (DBR). The absorptance reaches nearly unity at ≈3.73 μm with the bandwidth of 0.36 μm in the experiment. High temperature stabilities are confirmed up to 500 and 1000 °C in ambient and in vacuum, respectively. When the TiN TPP structure is compared to the TiN–insulator–TiN (TiN‐metal–insulator–metal (MIM)) structure, the former shows higher Q‐factor, which indicates the advantage of choosing the TiN TTP structure against the MIM structure. The proposed refractory TiN TPP structure is lithography‐free and scalable, which paves a way for large scale thermal emitters in practical usage.
The titanium nitride (TiN) thermal emitter based on Tamm plasmon polaritons (TPP) structure with a top oxide layer can achieve near perfect absorption and possess a narrow bandwidth. Via the heating process, the formation of the top thermally oxidized layer provides a protection to the structure. The property can be sustained even at 1000 °C for 5 h in vacuum.</description><subject>Absorptance</subject><subject>Absorptivity</subject><subject>Emitters</subject><subject>High temperature</subject><subject>Materials science</subject><subject>narrow‐band emission</subject><subject>Optics</subject><subject>Polaritons</subject><subject>refractory materials</subject><subject>Tamm plasmon polaritons</subject><subject>thermal emission</subject><subject>Thin films</subject><subject>Titanium nitride</subject><subject>titanium nitrides</subject><issn>2195-1071</issn><issn>2195-1071</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNqFkL1OwzAUhS0EElXpymyJOcV2kjoeS38oUmkHymzdJHbrKk6K46jqxiPwjDwJiYqAjeX-6TvnSgehW0qGlBB2D3llh4xQQYhI2AXqMSrigBJOL__M12hQ13tCSLuEIuI9pFfgXHX8fP94gDLHm51yFgo8s8Z75fDR-B3eGA-laSxeGe9MrlrKlHhuCounylZl7R14U27xwmxbWtmDag-NU_jFQ2oK40836EpDUavBd--j1_lsM1kEy_Xj02S8DLKQchYwHdEwVWEEWsSUR_FIcw2CckJHMWRd5YxkeUYh5sAgzXQKSZKFQkVxGudhH92dfQ-uemtU7eW-alzZvpQsFCRKSBLxlhqeqcxVde2UlgdnLLiTpER2ccouTvkTZysQZ8HRFOr0Dy3H0_Xzr_YLnxF6wg</recordid><startdate>20200401</startdate><enddate>20200401</enddate><creator>Yang, Zih‐Ying</creator><creator>Ishii, Satoshi</creator><creator>Doan, Anh Tung</creator><creator>Shinde, Satish Laxman</creator><creator>Dao, Thang Duy</creator><creator>Lo, Yu‐Ping</creator><creator>Chen, Kuo‐Ping</creator><creator>Nagao, Tadaaki</creator><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-5027-9079</orcidid><orcidid>https://orcid.org/0000-0002-3291-7791</orcidid><orcidid>https://orcid.org/0000-0001-6601-1464</orcidid><orcidid>https://orcid.org/0000-0003-0731-8428</orcidid><orcidid>https://orcid.org/0000-0002-6746-2686</orcidid><orcidid>https://orcid.org/0000-0002-0353-3705</orcidid><orcidid>https://orcid.org/0000-0001-6256-9145</orcidid></search><sort><creationdate>20200401</creationdate><title>Narrow‐Band Thermal Emitter with Titanium Nitride Thin Film Demonstrating High Temperature Stability</title><author>Yang, Zih‐Ying ; Ishii, Satoshi ; Doan, Anh Tung ; Shinde, Satish Laxman ; Dao, Thang Duy ; Lo, Yu‐Ping ; Chen, Kuo‐Ping ; Nagao, Tadaaki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3172-2f413be34af9517456f7fa9170165ac0165720cdc1a57a2abcfba88c39e45b5d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Absorptance</topic><topic>Absorptivity</topic><topic>Emitters</topic><topic>High temperature</topic><topic>Materials science</topic><topic>narrow‐band emission</topic><topic>Optics</topic><topic>Polaritons</topic><topic>refractory materials</topic><topic>Tamm plasmon polaritons</topic><topic>thermal emission</topic><topic>Thin films</topic><topic>Titanium nitride</topic><topic>titanium nitrides</topic><toplevel>online_resources</toplevel><creatorcontrib>Yang, Zih‐Ying</creatorcontrib><creatorcontrib>Ishii, Satoshi</creatorcontrib><creatorcontrib>Doan, Anh Tung</creatorcontrib><creatorcontrib>Shinde, Satish Laxman</creatorcontrib><creatorcontrib>Dao, Thang Duy</creatorcontrib><creatorcontrib>Lo, Yu‐Ping</creatorcontrib><creatorcontrib>Chen, Kuo‐Ping</creatorcontrib><creatorcontrib>Nagao, Tadaaki</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Advanced optical materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yang, Zih‐Ying</au><au>Ishii, Satoshi</au><au>Doan, Anh Tung</au><au>Shinde, Satish Laxman</au><au>Dao, Thang Duy</au><au>Lo, Yu‐Ping</au><au>Chen, Kuo‐Ping</au><au>Nagao, Tadaaki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Narrow‐Band Thermal Emitter with Titanium Nitride Thin Film Demonstrating High Temperature Stability</atitle><jtitle>Advanced optical materials</jtitle><date>2020-04-01</date><risdate>2020</risdate><volume>8</volume><issue>8</issue><epage>n/a</epage><issn>2195-1071</issn><eissn>2195-1071</eissn><abstract>A refractory wavelength selective thermal emitter is experimentally realized by the excitation of Tamm plasmon polaritons (TPPs) between a titanium nitride (TiN) thin film and a distributed Bragg reflector (DBR). The absorptance reaches nearly unity at ≈3.73 μm with the bandwidth of 0.36 μm in the experiment. High temperature stabilities are confirmed up to 500 and 1000 °C in ambient and in vacuum, respectively. When the TiN TPP structure is compared to the TiN–insulator–TiN (TiN‐metal–insulator–metal (MIM)) structure, the former shows higher Q‐factor, which indicates the advantage of choosing the TiN TTP structure against the MIM structure. The proposed refractory TiN TPP structure is lithography‐free and scalable, which paves a way for large scale thermal emitters in practical usage.
The titanium nitride (TiN) thermal emitter based on Tamm plasmon polaritons (TPP) structure with a top oxide layer can achieve near perfect absorption and possess a narrow bandwidth. Via the heating process, the formation of the top thermally oxidized layer provides a protection to the structure. The property can be sustained even at 1000 °C for 5 h in vacuum.</abstract><cop>Weinheim</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/adom.201900982</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0001-5027-9079</orcidid><orcidid>https://orcid.org/0000-0002-3291-7791</orcidid><orcidid>https://orcid.org/0000-0001-6601-1464</orcidid><orcidid>https://orcid.org/0000-0003-0731-8428</orcidid><orcidid>https://orcid.org/0000-0002-6746-2686</orcidid><orcidid>https://orcid.org/0000-0002-0353-3705</orcidid><orcidid>https://orcid.org/0000-0001-6256-9145</orcidid></addata></record> |
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subjects | Absorptance Absorptivity Emitters High temperature Materials science narrow‐band emission Optics Polaritons refractory materials Tamm plasmon polaritons thermal emission Thin films Titanium nitride titanium nitrides |
title | Narrow‐Band Thermal Emitter with Titanium Nitride Thin Film Demonstrating High Temperature Stability |
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