Narrow‐Band Thermal Emitter with Titanium Nitride Thin Film Demonstrating High Temperature Stability

A refractory wavelength selective thermal emitter is experimentally realized by the excitation of Tamm plasmon polaritons (TPPs) between a titanium nitride (TiN) thin film and a distributed Bragg reflector (DBR). The absorptance reaches nearly unity at ≈3.73 μm with the bandwidth of 0.36 μm in the experiment. High temperature stabilities are confirmed up to 500 and 1000 °C in ambient and in vacuum, respectively. When the TiN TPP structure is compared to the TiN–insulator–TiN (TiN‐metal–insulator–metal (MIM)) structure, the former shows higher Q‐factor, which indicates the advantage of choosing the TiN TTP structure against the MIM structure. The proposed refractory TiN TPP structure is lithography‐free and scalable, which paves a way for large scale thermal emitters in practical usage. The titanium nitride (TiN) thermal emitter based on Tamm plasmon polaritons (TPP) structure with a top oxide layer can achieve near perfect absorption and possess a narrow bandwidth. Via the heating process, the formation of the top thermally oxidized layer provides a protection to the structure. The property can be sustained even at 1000 °C for 5 h in vacuum.