Bioinspired construction of BN@polydopamine@Al2O3 fillers for preparation of a polyimide dielectric composite with enhanced thermal conductivity and breakdown strength

This paper reports that a novel polyimide dielectric composite with three-dimensional (3D) thermally conductive networks and enhanced breakdown strength was firstly fabricated by filling with core-double-shell structured F-BA fillers. The F-BA particles were composed of nano-sized boron nitride (nBN...

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Veröffentlicht in:Journal of materials science 2020-07, Vol.55 (19), p.8170-8184
Hauptverfasser: Duan, Guangyu, Cao, Yutong, Quan, Jiayou, Hu, Zuming, Wang, Yan, Yu, Junrong, Zhu, Jing
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Sprache:eng
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Zusammenfassung:This paper reports that a novel polyimide dielectric composite with three-dimensional (3D) thermally conductive networks and enhanced breakdown strength was firstly fabricated by filling with core-double-shell structured F-BA fillers. The F-BA particles were composed of nano-sized boron nitride (nBN) and polydopamine-coated spherical alumina (PDA@Al 2 O 3 ). Moreover, to ameliorate interfacial compatibility between F-BA fillers and PI matrix as well as restrain phonons scattering during propagation, 1,6-Diisocyanatohexane (HDI) was innovatively used as “bridge agent” to connect and functionalize nBN and PDA@Al 2 O 3 particles to generate core-double-shell structure. The results revealed that breakdown strength of PI dielectric composite with 25 wt % F-BA fillers was increased to 146.3 MV·m −1 , showing an increment of 68.5% in comparison with that of pure PI. Furthermore, the thermal conductivity of F-BA/PI composite with 25 wt % F-BA fillers increases to 6.41 W/m·K of in-plane direction and 1.01 W/m·K of through-plane direction, respectively, which shows 36 and 6 times higher than polyimide of 0.18 W/m·K. For dielectric properties of F-BA/PI composite, the dielectric constant and loss are less than 3.5 and 0.02, respectively. Considering these properties, the prepared PI dielectric composite shows potential application in high-performance electronic devices.
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-020-04596-5