Effect of Doping on the Luminescent Properties of LED Heterostructures with Quantum Wells

It is established that the model of interband radiative recombination in a semiconductor under bipolar injection of charge carriers, in which the recombination rate is described by the product of the total charge carrier concentrations, does not take into account the imbalance in the concentrations of recombining particles physically existing during doping. To calculate the number of electron-hole pair recombination events taking into account the difference in the concentrations of recombining particles, it is proposed to use the calculation of the reciprocal sum of the reciprocal concentrations using the participation functions. It is shown that at such a description of the number of recombination events, an increase in the doping impurity concentration reduces the number of events, but leaves the radiative recombination time unchanged at any injection level.