Improved T MAX Estimation in GaN HEMTs Using an Equivalent Hot Point Approximation

In this article, heat generation distribution and maximum device temperature of gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) are investigated by using the 2-D electrothermal and finite-element method (FEM) simulations. Devices with different gate lengths and source-to-drain spacing are investigated. It is observed that the maximum device temperature ([Formula Omitted]) depends on the drain-to-source spacing and is almost independent of the gate length and that the assumption of a uniform heat generation region, under the gate, is not accurate; this is contrary to conventional calculation methods. Moreover, based on the results, a new approximation is proposed to use in the FEM simulations that can estimate [Formula Omitted] more accurately. This method does not require physics-based technology computer-aided design (TCAD) simulations and can work with a low mesh density. The performance is compared with prior methods.