Modeling of the Optical Properties of Black Silicon Passivated by Thin Films of Metal Oxides
Using the finite difference time domain (FDTD) method, we studied the optical properties of black silicon (BSi) layers passivated with the various metal oxides (Al 2 O 3 , TiO 2 , HfO 2 , and Sc 2 O 3 ) films, obtained by atomic layer deposition (ALD) method. The results of FDTD modeling indicate an...
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| Veröffentlicht in: | Journal of contemporary physics 2020, Vol.55 (1), p.16-22 |
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| container_title | Journal of contemporary physics |
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| creator | Katkov, M. V. Ayvazyan, G. Y. Shayapov, V. R. Lebedev, M. S. |
| description | Using the finite difference time domain (FDTD) method, we studied the optical properties of black silicon (BSi) layers passivated with the various metal oxides (Al
2
O
3
, TiO
2
, HfO
2
, and Sc
2
O
3
) films, obtained by atomic layer deposition (ALD) method. The results of FDTD modeling indicate an improvement in the antireflection properties of BSi/ALD film structures in the wide spectral range. The necessity to choose the optimal film thickness is shown. |
| doi_str_mv | 10.3103/S106833722001003X |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2382063932</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2382063932</sourcerecordid><originalsourceid>FETCH-LOGICAL-c316t-31fef7505829f09a447b36ad1ed3c954885d4c5356e879c30aeaf647c749c2633</originalsourceid><addsrcrecordid>eNp1kNFKwzAUhoMoOKcP4F3A62qS07TNpQ6nwsYGm-CFULL0dMvs2pp04t7ezAleiFfnwP9958BPyCVn18AZ3Mw4SzKAVAjGOGPwckR6XEEcKUiz47CHONrnp-TM-zVjUoa0R17HTYGVrZe0KWm3QjppO2t0RaeuadF1Fv0-uau0eaMzW1nT1HSqvbcfusOCLnZ0vrI1Hdpq802OsQv25NMW6M_JSakrjxc_s0-eh_fzwWM0mjw8DW5HkQGedBHwEstUMpkJVTKl4zhdQKILjgUYJeMsk0VsJMgEs1QZYBp1mcSpSWNlRALQJ1eHu61r3rfou3zdbF0dXuYCMsESUCACxQ-UcY33Dsu8dXaj3S7nLN-XmP8pMTji4PjA1kt0v5f_l74AmNFyHA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2382063932</pqid></control><display><type>article</type><title>Modeling of the Optical Properties of Black Silicon Passivated by Thin Films of Metal Oxides</title><source>SpringerLink Journals - AutoHoldings</source><creator>Katkov, M. V. ; Ayvazyan, G. Y. ; Shayapov, V. R. ; Lebedev, M. S.</creator><creatorcontrib>Katkov, M. V. ; Ayvazyan, G. Y. ; Shayapov, V. R. ; Lebedev, M. S.</creatorcontrib><description>Using the finite difference time domain (FDTD) method, we studied the optical properties of black silicon (BSi) layers passivated with the various metal oxides (Al
2
O
3
, TiO
2
, HfO
2
, and Sc
2
O
3
) films, obtained by atomic layer deposition (ALD) method. The results of FDTD modeling indicate an improvement in the antireflection properties of BSi/ALD film structures in the wide spectral range. The necessity to choose the optimal film thickness is shown.</description><identifier>ISSN: 1068-3372</identifier><identifier>EISSN: 1934-9378</identifier><identifier>DOI: 10.3103/S106833722001003X</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Aluminum oxide ; Atomic layer epitaxy ; Film thickness ; Finite difference time domain method ; Hafnium oxide ; Metal oxides ; Modelling ; Optical properties ; Particle and Nuclear Physics ; Physics ; Physics and Astronomy ; Scandium oxides ; Silicon ; Thin films ; Time domain analysis ; Titanium dioxide</subject><ispartof>Journal of contemporary physics, 2020, Vol.55 (1), p.16-22</ispartof><rights>Allerton Press, Inc. 2020</rights><rights>2020© Allerton Press, Inc. 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-31fef7505829f09a447b36ad1ed3c954885d4c5356e879c30aeaf647c749c2633</citedby><cites>FETCH-LOGICAL-c316t-31fef7505829f09a447b36ad1ed3c954885d4c5356e879c30aeaf647c749c2633</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.3103/S106833722001003X$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.3103/S106833722001003X$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27923,27924,41487,42556,51318</link.rule.ids></links><search><creatorcontrib>Katkov, M. V.</creatorcontrib><creatorcontrib>Ayvazyan, G. Y.</creatorcontrib><creatorcontrib>Shayapov, V. R.</creatorcontrib><creatorcontrib>Lebedev, M. S.</creatorcontrib><title>Modeling of the Optical Properties of Black Silicon Passivated by Thin Films of Metal Oxides</title><title>Journal of contemporary physics</title><addtitle>J. Contemp. Phys</addtitle><description>Using the finite difference time domain (FDTD) method, we studied the optical properties of black silicon (BSi) layers passivated with the various metal oxides (Al
2
O
3
, TiO
2
, HfO
2
, and Sc
2
O
3
) films, obtained by atomic layer deposition (ALD) method. The results of FDTD modeling indicate an improvement in the antireflection properties of BSi/ALD film structures in the wide spectral range. The necessity to choose the optimal film thickness is shown.</description><subject>Aluminum oxide</subject><subject>Atomic layer epitaxy</subject><subject>Film thickness</subject><subject>Finite difference time domain method</subject><subject>Hafnium oxide</subject><subject>Metal oxides</subject><subject>Modelling</subject><subject>Optical properties</subject><subject>Particle and Nuclear Physics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Scandium oxides</subject><subject>Silicon</subject><subject>Thin films</subject><subject>Time domain analysis</subject><subject>Titanium dioxide</subject><issn>1068-3372</issn><issn>1934-9378</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp1kNFKwzAUhoMoOKcP4F3A62qS07TNpQ6nwsYGm-CFULL0dMvs2pp04t7ezAleiFfnwP9958BPyCVn18AZ3Mw4SzKAVAjGOGPwckR6XEEcKUiz47CHONrnp-TM-zVjUoa0R17HTYGVrZe0KWm3QjppO2t0RaeuadF1Fv0-uau0eaMzW1nT1HSqvbcfusOCLnZ0vrI1Hdpq802OsQv25NMW6M_JSakrjxc_s0-eh_fzwWM0mjw8DW5HkQGedBHwEstUMpkJVTKl4zhdQKILjgUYJeMsk0VsJMgEs1QZYBp1mcSpSWNlRALQJ1eHu61r3rfou3zdbF0dXuYCMsESUCACxQ-UcY33Dsu8dXaj3S7nLN-XmP8pMTji4PjA1kt0v5f_l74AmNFyHA</recordid><startdate>2020</startdate><enddate>2020</enddate><creator>Katkov, M. V.</creator><creator>Ayvazyan, G. Y.</creator><creator>Shayapov, V. R.</creator><creator>Lebedev, M. S.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2020</creationdate><title>Modeling of the Optical Properties of Black Silicon Passivated by Thin Films of Metal Oxides</title><author>Katkov, M. V. ; Ayvazyan, G. Y. ; Shayapov, V. R. ; Lebedev, M. S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-31fef7505829f09a447b36ad1ed3c954885d4c5356e879c30aeaf647c749c2633</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Aluminum oxide</topic><topic>Atomic layer epitaxy</topic><topic>Film thickness</topic><topic>Finite difference time domain method</topic><topic>Hafnium oxide</topic><topic>Metal oxides</topic><topic>Modelling</topic><topic>Optical properties</topic><topic>Particle and Nuclear Physics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Scandium oxides</topic><topic>Silicon</topic><topic>Thin films</topic><topic>Time domain analysis</topic><topic>Titanium dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Katkov, M. V.</creatorcontrib><creatorcontrib>Ayvazyan, G. Y.</creatorcontrib><creatorcontrib>Shayapov, V. R.</creatorcontrib><creatorcontrib>Lebedev, M. S.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of contemporary physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Katkov, M. V.</au><au>Ayvazyan, G. Y.</au><au>Shayapov, V. R.</au><au>Lebedev, M. S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Modeling of the Optical Properties of Black Silicon Passivated by Thin Films of Metal Oxides</atitle><jtitle>Journal of contemporary physics</jtitle><stitle>J. Contemp. Phys</stitle><date>2020</date><risdate>2020</risdate><volume>55</volume><issue>1</issue><spage>16</spage><epage>22</epage><pages>16-22</pages><issn>1068-3372</issn><eissn>1934-9378</eissn><abstract>Using the finite difference time domain (FDTD) method, we studied the optical properties of black silicon (BSi) layers passivated with the various metal oxides (Al
2
O
3
, TiO
2
, HfO
2
, and Sc
2
O
3
) films, obtained by atomic layer deposition (ALD) method. The results of FDTD modeling indicate an improvement in the antireflection properties of BSi/ALD film structures in the wide spectral range. The necessity to choose the optimal film thickness is shown.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.3103/S106833722001003X</doi><tpages>7</tpages></addata></record> |
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| language | eng |
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| subjects | Aluminum oxide Atomic layer epitaxy Film thickness Finite difference time domain method Hafnium oxide Metal oxides Modelling Optical properties Particle and Nuclear Physics Physics Physics and Astronomy Scandium oxides Silicon Thin films Time domain analysis Titanium dioxide |
| title | Modeling of the Optical Properties of Black Silicon Passivated by Thin Films of Metal Oxides |
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