Modeling of the Optical Properties of Black Silicon Passivated by Thin Films of Metal Oxides

Using the finite difference time domain (FDTD) method, we studied the optical properties of black silicon (BSi) layers passivated with the various metal oxides (Al 2 O 3 , TiO 2 , HfO 2 , and Sc 2 O 3 ) films, obtained by atomic layer deposition (ALD) method. The results of FDTD modeling indicate an...

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Veröffentlicht in:	Journal of contemporary physics 2020, Vol.55 (1), p.16-22
Hauptverfasser:	Katkov, M. V., Ayvazyan, G. Y., Shayapov, V. R., Lebedev, M. S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Atomic layer epitaxy Film thickness Finite difference time domain method Hafnium oxide Metal oxides Modelling Optical properties Particle and Nuclear Physics Physics Physics and Astronomy Scandium oxides Silicon Thin films Time domain analysis Titanium dioxide
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Zusammenfassung:	Using the finite difference time domain (FDTD) method, we studied the optical properties of black silicon (BSi) layers passivated with the various metal oxides (Al 2 O 3 , TiO 2 , HfO 2 , and Sc 2 O 3 ) films, obtained by atomic layer deposition (ALD) method. The results of FDTD modeling indicate an improvement in the antireflection properties of BSi/ALD film structures in the wide spectral range. The necessity to choose the optimal film thickness is shown.
ISSN:	1068-3372 1934-9378
DOI:	10.3103/S106833722001003X