Test Objects with a Rectangular Profile for SEM: 2. Certification of the Groove Width

A procedure for certifying the width of relief grooves with a rectangular profile in silicon is described. It is comprised of two operations. The first operation consists in measuring the thickness of a silicon-oxide film on a single-crystal silicon substrate by ellipsometry. The second operation co...

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Veröffentlicht in:	Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2020, Vol.14 (1), p.105-116
1. Verfasser:	Novikov, Yu. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry and Materials Science Ellipsometry Grooves Materials Science Oxide coatings Silicon Silicon oxides Silicon substrates Single crystals Surfaces and Interfaces Thickness measurement Thin Films
Online-Zugang:	Volltext
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Zusammenfassung:	A procedure for certifying the width of relief grooves with a rectangular profile in silicon is described. It is comprised of two operations. The first operation consists in measuring the thickness of a silicon-oxide film on a single-crystal silicon substrate by ellipsometry. The second operation consists in determining the change in the width of grooves after restoring the native silicon oxide on the surface of the groove side walls. The procedure for measuring the thickness of the native silicon–oxide layer by scanning electron microscopy is described.
ISSN:	1027-4510 1819-7094
DOI:	10.1134/S1027451020010127