Waterproof Flexible InP@ZnSeS Quantum Dot Light‐Emitting Diode

The development of flexible displays for wearable electronics applications has created demand for high‐performance quantum dot (QD) light‐emitting diodes (QLEDs) based on QD core@shell structures. Emerging indium phosphide (InP)‐based core@shell QDs show promise as lighting material in the field of optoelectronics because they are environmentally friendly material, can be produced in a cost‐effective manner, and are capable of tunable emission. While efforts have been made to enhance the performance of InP‐based QLED, the stabilities of InP@ZnSeS QDs film and InP@ZnSeS‐based QLED in water/air are not yet fully understood, limiting their practical applications. Herein, a highly durable, flexible InP@ZnSeS QLED encapsulated in an ultrathin film of CYTOP, a solution‐based amorphous fluoropolymer, is demonstrated. The CYTOP‐encapsulated green flexible QLED shows an external quantum efficiency (EQE) of 0.904% and a high luminescence of 1593 cd m−2 as well as outstanding waterproof performance. The flexible device emits strong luminescence after being immersed in water for ≈20 min. Even when subjected to continuous tensile stress with a 5 mm bending radius, the high luminescence is preserved. This waterproof architecture can be a promising strategy for wearable electronics applications. A highly durable, flexible InP@ZnSeS QLED encapsulated in an ultrathin film of CYTOP, a solution‐based amorphous fluoropolymer, is demonstrated. The CYTOP‐encapsulated green flexible QLED shows an external quantum efficiency (EQE) of 0.904% and a high luminescence of 1593 cd m−2 as well as outstanding waterproof performance. The flexible device emits strong luminescence after being immersed in water for ≈20 min.