GaSe layered nanorods formed by liquid phase exfoliation for resistive switching memory applications

The increasing interest and rapid progress in the artificial neural networks have driven extensive research in resistive switching memory based on various insulators and two-dimensional nanomaterials. Herein, we have demonstrated a kind of resistive switching memory device based on GaSe layered nanorods fabricated by liquid phase exfoliation (LPE) method with a lateral graphene/GaSe/graphene structure. The single crystalline GaSe layered nanorods mixed with a few nanoflakes were synthesized by shear and ultrasonic (bath and probe) exfoliation methods, which showed high quality and hexagonal crystalline structure. The electrical properties and the resistive switching behavior were investigated, indicating the charge trapping/detrapping effect is the dominant resistive switching mechanism. This work suggests a novel strategy to develop the resistive switching devices based on various 2D materials by using LPE method, and these 2D-nanomaterials-based memristors have the potential to be used for constructing neuromorphic computing systems. A resistive switching device based on GaSe layered nanorods fabricated by LPE with a graphene/GaSe/graphene structure is demonstrated. [Display omitted] •The single crystalline GaSe layered nanorods mixed with nanoflakes are synthesized by shear and ultrasonic exfoliation methods, showing high quality and hexagonal structure.•This work suggests a novel strategy to develop the resistive switching devices based on 2D materials by using LPE method.•The memory device exhibits excellent memristive behavior and good stability, dominant by the charge trapping/detrapping effect.