Inserting dome shape microstructure for enhancement of ultraviolet photodetector performance of n-ZnO nanorods/p-Si heterojunction

A mixed intermediate layer of silica and zinc oxide (SZO) with architecturally dome-shaped microstructure is fabricated and characterized by combining a hydrothermal method and a plasma-enhanced chemical vapor deposition technique. Our results demonstrated that 200 °C was an optimum deposition temperature for dome shape architecture SZO layer, acting as an antireflection layer in the ultraviolet range and buffer layer for growth ZnO nanorods (NRs) arrays. Consequently, at 2.0 V reverse bias, the photo-to-dark current ratio measured with an p-Si/n-ZnONRs photodiode employing the dome-shaped SZO layer is improved by almost three orders of magnitude in the ultraviolet range as compared to that under visible-light illumination. •Architecturally dome-shaped microstructures.•Combining a hydrothermal method and a plasma-enhanced chemical vapor deposition technique.•Intermediate layer for antireflection in the ultraviolet region.