Domain structure and multiferroic properties of epitaxial hexagonal ErMnO3 films
Epitaxial ErMnO3 thin films were grown on Pt-coated Al2O3 substrate by pulsed laser deposition. Their structure, multiferroicity, and ferroelectric domain properties have been comprehensively characterized and studied. The XRD measurement indicated an excellent epitaxy of out-of-plane ErMnO3(0001)//...
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Veröffentlicht in: | Journal of alloys and compounds 2020-04, Vol.821, p.153529, Article 153529 |
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Sprache: | eng |
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Zusammenfassung: | Epitaxial ErMnO3 thin films were grown on Pt-coated Al2O3 substrate by pulsed laser deposition. Their structure, multiferroicity, and ferroelectric domain properties have been comprehensively characterized and studied. The XRD measurement indicated an excellent epitaxy of out-of-plane ErMnO3(0001)//Pt(111)//Al2O3(0001) and in-plane ErMnO3[1000]//Pt[112‾]//Al2O3[112‾0] structures. The as-deposited ErMnO3 films exhibited spontaneous ferroelectric domains with reversible polarization. A significant remnant polarization of 1.3 μC/cm2 and an active peak at 662 cm−1 in Raman spectra were found, further showing a high quality of the ErMnO3 thin films. Moreover, the magnetic measurements indicated that the thin film has an excellent anisotropic magnetic property with a Neel temperature at ≈53 K.
•The films were grown with highly hexagonal epitaxy with out-of-plane ErMnO3(0001)//Pt(111)//Al2O3(0001) and in-plane ErMnO3[1000]//Pt[112]//Al2O3[1120].•The as-deposited ErMnO3 films clearly exhibited spontaneous ferroelectric domains, which can be polarized reversibly with excellent retention performance.•A remanent polarization value of 1.3 μC/cm2 and a significant Raman-active peak at 662 cm−1 were observed.•The films exhibited a anisotropic magnetic properties with a Neel temperature of 53 K. |
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ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2019.153529 |