Unsteady numerical simulations considering effects of thermal stress and heavy doping on the behavior of intrinsic point defects in large-diameter Si crystal growing by Czochralski method

•Effect of dopant on point defect in grown Si crystal by Cz method was studied.•Effect of thermal stress on point defect in grown Si crystal was studied.•Time variation of dopant concentration affects point defect distribution in grown Si.•Time variation of thermal stress affects point defect distribution in grown Si. We conducted unsteady simulations of intrinsic point defect dynamics considering the effects of the thermal stress and dopant concentration in a large-diameter silicon crystal growing by the Czochralski (Cz) method. The thermal equilibrium concentration of the intrinsic point defects (vacancy, V, and self-interstitial Si atom, I) was simulated as a function of the thermal stress and the incorporated dopant concentration in a growing Si crystal, which was obtained through ab-initio calculations. Furthermore, point defect dynamics in the crystal were solved within a two-dimensional axisymmetric unsteady global heat and mass transport model by considering the thermal stress and the incorporation of a dopant using segregation for dynamically pulling Si crystal by the Cz method. The unsteady numerical simulations showed that the formation and the distribution of intrinsic point defects depend on the temporal variation of the thermal stress and the incorporated dopant concentration in a growing Si crystal.