Electronic Conductivity in a Р+-Ion Implanted Positive Photoresist

FP-9120 positive photoresist films 1.8 μm thick implanted with boron and phosphorus ions deposited onto the surface of KDB-10 single-crystal (111) silicon wafers by centrifugation are investigated by their conductivity and electron spin resonance measurements. It is shown that the Р + ion implantati...

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Veröffentlicht in:	Russian microelectronics 2020, Vol.49 (1), p.55-61
Hauptverfasser:	Oleshkevich, A. N., Lapchuk, N. M., Odzhaev, V. B., Karpovich, I. A., Prosolovich, V. S., Brinkevich, D. I., Brinkevich, S. D.
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Sprache:	eng
Schlagworte:	Boron Conductivity Electrical Engineering Electron paramagnetic resonance Electron spin Electrons Engineering Ion implantation Photoresists Silicon wafers Single crystals Spin resonance Thick films
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creator	Oleshkevich, A. N. Lapchuk, N. M. Odzhaev, V. B. Karpovich, I. A. Prosolovich, V. S. Brinkevich, D. I. Brinkevich, S. D.
description	FP-9120 positive photoresist films 1.8 μm thick implanted with boron and phosphorus ions deposited onto the surface of KDB-10 single-crystal (111) silicon wafers by centrifugation are investigated by their conductivity and electron spin resonance measurements. It is shown that the Р + ion implantation leads to the formation of a layer with an electronic conductivity of about 10 −9 Ω −1 cm −1 . At a phosphorous implantation dose of 6 × 10 15 cm −2 , the electron spin resonance spectrum contains a narrow isotropic line with a g factor of 2.00654 and a width of 3.83 G, which is most likely related to the formation of phenoxy radicals. As the implantation dose increases to 1.2 × 10 16 cm −2 , a line with a g factor of 2.00264 and a width of 3.96 G is detected in the electron spin resonance spectrum, which is caused by unpaired electrons delocalized according to the π-polyconjugated system.
doi_str_mv	10.1134/S1063739719060076
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D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electronic Conductivity in a Р+-Ion Implanted Positive Photoresist</atitle><jtitle>Russian microelectronics</jtitle><stitle>Russ Microelectron</stitle><date>2020</date><risdate>2020</risdate><volume>49</volume><issue>1</issue><spage>55</spage><epage>61</epage><pages>55-61</pages><issn>1063-7397</issn><eissn>1608-3415</eissn><abstract>FP-9120 positive photoresist films 1.8 μm thick implanted with boron and phosphorus ions deposited onto the surface of KDB-10 single-crystal (111) silicon wafers by centrifugation are investigated by their conductivity and electron spin resonance measurements. It is shown that the Р + ion implantation leads to the formation of a layer with an electronic conductivity of about 10 −9 Ω −1 cm −1 . 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subjects	Boron Conductivity Electrical Engineering Electron paramagnetic resonance Electron spin Electrons Engineering Ion implantation Photoresists Silicon wafers Single crystals Spin resonance Thick films
title	Electronic Conductivity in a Р+-Ion Implanted Positive Photoresist
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