Electronic Conductivity in a Р+-Ion Implanted Positive Photoresist

FP-9120 positive photoresist films 1.8 μm thick implanted with boron and phosphorus ions deposited onto the surface of KDB-10 single-crystal (111) silicon wafers by centrifugation are investigated by their conductivity and electron spin resonance measurements. It is shown that the Р + ion implantation leads to the formation of a layer with an electronic conductivity of about 10 −9 Ω −1 cm −1 . At a phosphorous implantation dose of 6 × 10 15 cm −2 , the electron spin resonance spectrum contains a narrow isotropic line with a g factor of 2.00654 and a width of 3.83 G, which is most likely related to the formation of phenoxy radicals. As the implantation dose increases to 1.2 × 10 16 cm −2 , a line with a g factor of 2.00264 and a width of 3.96 G is detected in the electron spin resonance spectrum, which is caused by unpaired electrons delocalized according to the π-polyconjugated system.