Multidimensional dU/dT Effect in High-Power Thyristors

The procedure making it possible to take into account the influence of high-power thyristor design elements on its dU / dt parameter is described. A simple model is proposed, using which, it is possible to find the parameters of the auxiliary thyristor structure of a regenerative control gate that p...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2020, Vol.54 (1), p.112-116
Hauptverfasser:	Yurkov, S. N., Mnatsakanov, T. T., Tandoev, A. G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Magnetic Materials Magnetism Parameters Physical Sciences Physics Physics and Astronomy Physics of Semiconductor Devices Physics, Condensed Matter Science & Technology Thyristors
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	The procedure making it possible to take into account the influence of high-power thyristor design elements on its dU / dt parameter is described. A simple model is proposed, using which, it is possible to find the parameters of the auxiliary thyristor structure of a regenerative control gate that provides a specified value of the dU / dt effect in a thyristor. The minimal possible thyristor turn-on current limited by the specified limiting voltage increment rate is found.
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782620010273