Optimization of the In0.3Ga0.7As-Layer Thickness in a Triple-Junction In0.3Ga0.7As/GaAs/In0.5Ga0.5P Solar Cell
The optimum absorbing-layer thickness in the bottom In 0.3 Ga 0.7 As subcell of a triple-junction In 0.3 Ga 0.7 As/GaAs/In 0.5 Ga 0.5 P solar cell is sought for using the Sentaurus TCAD software package as a factor of the minority charge-carrier lifetime in this layer. The lifetime is set in the ran...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2020, Vol.54 (1), p.108-111 |
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| creator | Legan, D. M. Pchelyakov, O. P. Preobrazhenskii, V. V. |
| description | The optimum absorbing-layer thickness in the bottom In
0.3
Ga
0.7
As subcell of a triple-junction In
0.3
Ga
0.7
As/GaAs/In
0.5
Ga
0.5
P solar cell is sought for using the Sentaurus TCAD software package as a factor of the minority charge-carrier lifetime in this layer. The lifetime is set in the range from 17 ps to 53 ns. The calculation results show that the optimum thickness varies from 0.9 to 7.5 μm. In addition, the contribution of the bottom In
0.3
Ga
0.7
As subcell to the efficiency of this triple-junction solar cell is estimated at various lifetime values. Its value varies from 1 to 7%. |
| doi_str_mv | 10.1134/S1063782620010133 |
| format | Article |
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0.3
Ga
0.7
As subcell of a triple-junction In
0.3
Ga
0.7
As/GaAs/In
0.5
Ga
0.5
P solar cell is sought for using the Sentaurus TCAD software package as a factor of the minority charge-carrier lifetime in this layer. The lifetime is set in the range from 17 ps to 53 ns. The calculation results show that the optimum thickness varies from 0.9 to 7.5 μm. In addition, the contribution of the bottom In
0.3
Ga
0.7
As subcell to the efficiency of this triple-junction solar cell is estimated at various lifetime values. Its value varies from 1 to 7%.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782620010133</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Carrier lifetime ; Current carriers ; Magnetic Materials ; Magnetism ; Optimization ; Photovoltaic cells ; Physics ; Physics and Astronomy ; Physics of Semiconductor Devices ; Solar cells ; Thickness</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2020, Vol.54 (1), p.108-111</ispartof><rights>Pleiades Publishing, Ltd. 2020</rights><rights>2020© Pleiades Publishing, Ltd. 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-1932d72d21513ef832cb4915e7c11a8553d1697902a92d6a347670ceb139fcd63</citedby><cites>FETCH-LOGICAL-c316t-1932d72d21513ef832cb4915e7c11a8553d1697902a92d6a347670ceb139fcd63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782620010133$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782620010133$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Legan, D. M.</creatorcontrib><creatorcontrib>Pchelyakov, O. P.</creatorcontrib><creatorcontrib>Preobrazhenskii, V. V.</creatorcontrib><title>Optimization of the In0.3Ga0.7As-Layer Thickness in a Triple-Junction In0.3Ga0.7As/GaAs/In0.5Ga0.5P Solar Cell</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The optimum absorbing-layer thickness in the bottom In
0.3
Ga
0.7
As subcell of a triple-junction In
0.3
Ga
0.7
As/GaAs/In
0.5
Ga
0.5
P solar cell is sought for using the Sentaurus TCAD software package as a factor of the minority charge-carrier lifetime in this layer. The lifetime is set in the range from 17 ps to 53 ns. The calculation results show that the optimum thickness varies from 0.9 to 7.5 μm. In addition, the contribution of the bottom In
0.3
Ga
0.7
As subcell to the efficiency of this triple-junction solar cell is estimated at various lifetime values. Its value varies from 1 to 7%.</description><subject>Carrier lifetime</subject><subject>Current carriers</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Optimization</subject><subject>Photovoltaic cells</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Physics of Semiconductor Devices</subject><subject>Solar cells</subject><subject>Thickness</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp1kEFLAzEQhYMoWKs_wFvA87aZZJNsjqVorRQqtJ6XNJu1qdvsmmwP9de7awUF8TIzvHnfGxiEboGMAFg6XgERTGZUUEKAAGNnaABEkUSkUp33s2BJv79EVzHuOhNkPB0gv2xat3cfunW1x3WJ263Fc09GbKbJSE5istBHG_B668ybtzFi57HG6-CayiZPB2--wN_EeKa70iu8V_gzXtWVDnhqq-oaXZS6ivbmuw_Ry8P9evqYLJaz-XSySAwD0SagGC0kLShwYLbMGDWbVAG30gDojHNWgFBSEaoVLYRmqRSSGLsBpkpTCDZEd6fcJtTvBxvbfFcfgu9O5pRJwnkmRO-Ck8uEOsZgy7wJbq_DMQeS92_N_7y1Y-iJiZ3Xv9rwk_w_9Alqt3Pz</recordid><startdate>2020</startdate><enddate>2020</enddate><creator>Legan, D. M.</creator><creator>Pchelyakov, O. P.</creator><creator>Preobrazhenskii, V. V.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2020</creationdate><title>Optimization of the In0.3Ga0.7As-Layer Thickness in a Triple-Junction In0.3Ga0.7As/GaAs/In0.5Ga0.5P Solar Cell</title><author>Legan, D. M. ; Pchelyakov, O. P. ; Preobrazhenskii, V. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-1932d72d21513ef832cb4915e7c11a8553d1697902a92d6a347670ceb139fcd63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Carrier lifetime</topic><topic>Current carriers</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Optimization</topic><topic>Photovoltaic cells</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Physics of Semiconductor Devices</topic><topic>Solar cells</topic><topic>Thickness</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Legan, D. M.</creatorcontrib><creatorcontrib>Pchelyakov, O. P.</creatorcontrib><creatorcontrib>Preobrazhenskii, V. V.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Legan, D. M.</au><au>Pchelyakov, O. P.</au><au>Preobrazhenskii, V. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optimization of the In0.3Ga0.7As-Layer Thickness in a Triple-Junction In0.3Ga0.7As/GaAs/In0.5Ga0.5P Solar Cell</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2020</date><risdate>2020</risdate><volume>54</volume><issue>1</issue><spage>108</spage><epage>111</epage><pages>108-111</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The optimum absorbing-layer thickness in the bottom In
0.3
Ga
0.7
As subcell of a triple-junction In
0.3
Ga
0.7
As/GaAs/In
0.5
Ga
0.5
P solar cell is sought for using the Sentaurus TCAD software package as a factor of the minority charge-carrier lifetime in this layer. The lifetime is set in the range from 17 ps to 53 ns. The calculation results show that the optimum thickness varies from 0.9 to 7.5 μm. In addition, the contribution of the bottom In
0.3
Ga
0.7
As subcell to the efficiency of this triple-junction solar cell is estimated at various lifetime values. Its value varies from 1 to 7%.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782620010133</doi><tpages>4</tpages></addata></record> |
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| language | eng |
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| source | SpringerLink Journals |
| subjects | Carrier lifetime Current carriers Magnetic Materials Magnetism Optimization Photovoltaic cells Physics Physics and Astronomy Physics of Semiconductor Devices Solar cells Thickness |
| title | Optimization of the In0.3Ga0.7As-Layer Thickness in a Triple-Junction In0.3Ga0.7As/GaAs/In0.5Ga0.5P Solar Cell |
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