Optimization of the In0.3Ga0.7As-Layer Thickness in a Triple-Junction In0.3Ga0.7As/GaAs/In0.5Ga0.5P Solar Cell

Optimization of the In0.3Ga0.7As-Layer Thickness in a Triple-Junction In0.3Ga0.7As/GaAs/In0.5Ga0.5P Solar Cell

The optimum absorbing-layer thickness in the bottom In 0.3 Ga 0.7 As subcell of a triple-junction In 0.3 Ga 0.7 As/GaAs/In 0.5 Ga 0.5 P solar cell is sought for using the Sentaurus TCAD software package as a factor of the minority charge-carrier lifetime in this layer. The lifetime is set in the ran...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2020, Vol.54 (1), p.108-111
Hauptverfasser: Legan, D. M., Pchelyakov, O. P., Preobrazhenskii, V. V.
Format: Artikel
Sprache:eng
Schlagworte:
Carrier lifetime
Current carriers
Magnetic Materials
Magnetism
Optimization
Photovoltaic cells
Physics
Physics and Astronomy
Physics of Semiconductor Devices
Solar cells
Thickness
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Zusammenfassung:The optimum absorbing-layer thickness in the bottom In 0.3 Ga 0.7 As subcell of a triple-junction In 0.3 Ga 0.7 As/GaAs/In 0.5 Ga 0.5 P solar cell is sought for using the Sentaurus TCAD software package as a factor of the minority charge-carrier lifetime in this layer. The lifetime is set in the range from 17 ps to 53 ns. The calculation results show that the optimum thickness varies from 0.9 to 7.5 μm. In addition, the contribution of the bottom In 0.3 Ga 0.7 As subcell to the efficiency of this triple-junction solar cell is estimated at various lifetime values. Its value varies from 1 to 7%.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782620010133