High-Power 4H-SiC MOSFET with an Epitaxial Buried Channel
A method for reducing the on-state resistance of a high-power 4 H -SiC metal-oxide-semiconductor field-effect transistor (MOSFET) by forming a buried channel via the growth of epitaxial layers on the surface of the heavily doped p -region is proposed. The features of the carrier transport in the epi...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2020, Vol.54 (1), p.122-126 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Mikhaylov, A. I. Afanasyev, A. V. Ilyin, V. A. Luchinin, V. V. Reshanov, S. A. Schöner, A. |
| description | A method for reducing the on-state resistance of a high-power 4
H
-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) by forming a buried channel via the growth of epitaxial layers on the surface of the heavily doped
p
-region is proposed. The features of the carrier transport in the epitaxial buried channel are considered in comparison with that fabricated by conventional technology. A more than threefold decrease in the resistance of the high-power MOSFET is achieved. |
| doi_str_mv | 10.1134/S1063782620010157 |
| format | Article |
| fullrecord | <record><control><sourceid>gale_proqu</sourceid><recordid>TN_cdi_proquest_journals_2370558542</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A616207440</galeid><sourcerecordid>A616207440</sourcerecordid><originalsourceid>FETCH-LOGICAL-c355t-ba32d2cf34e125e1d706bfd293d761d93905c2c9b2bbb54cfb4303859f3d24e63</originalsourceid><addsrcrecordid>eNp1kE1LAzEQhoMoWKs_wFvAc2q-tznWpVqhUqF6XrL5aFO2uzW7S_Xfm7KCB5E5zDDzPjPJC8AtwRNCGL9fEyxZNqWSYkwwEdkZGBGsMJI8U-enWjJ0ml-Cq7bdJRGZCj4CahE2W_TaHF2EfIHWIYcvq_Xj_A0eQ7eFuobzQ-j0Z9AVfOhjcBbmW13XrroGF15Xrbv5yWPwnrB8gZarp-d8tkSGCdGhUjNqqfGMO0KFIzbDsvSWKmYzSaxiCgtDjSppWZaCG19yhtlUKM8s5U6yMbgb9h5i89G7tit2TR_rdLKgLMNCpH_QpJoMqo2uXBFq33RRmxTW7YNpaudD6s8kSQZlnOMEkAEwsWnb6HxxiGGv41dBcHGytPhjaWLowLRJW29c_H3K_9A3OqF0JA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2370558542</pqid></control><display><type>article</type><title>High-Power 4H-SiC MOSFET with an Epitaxial Buried Channel</title><source>Springer Nature - Complete Springer Journals</source><creator>Mikhaylov, A. I. ; Afanasyev, A. V. ; Ilyin, V. A. ; Luchinin, V. V. ; Reshanov, S. A. ; Schöner, A.</creator><creatorcontrib>Mikhaylov, A. I. ; Afanasyev, A. V. ; Ilyin, V. A. ; Luchinin, V. V. ; Reshanov, S. A. ; Schöner, A.</creatorcontrib><description>A method for reducing the on-state resistance of a high-power 4
H
-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) by forming a buried channel via the growth of epitaxial layers on the surface of the heavily doped
p
-region is proposed. The features of the carrier transport in the epitaxial buried channel are considered in comparison with that fabricated by conventional technology. A more than threefold decrease in the resistance of the high-power MOSFET is achieved.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782620010157</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Carrier transport ; Epitaxial growth ; Epitaxial layers ; Epitaxy ; Field effect transistors ; Integrated circuits ; Magnetic Materials ; Magnetism ; Metal oxide semiconductor field effect transistors ; MOSFETs ; Physics ; Physics and Astronomy ; Physics of Semiconductor Devices ; Semiconductor chips ; Semiconductor devices ; Silicon carbide</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2020, Vol.54 (1), p.122-126</ispartof><rights>Pleiades Publishing, Ltd. 2020</rights><rights>COPYRIGHT 2020 Springer</rights><rights>2020© Pleiades Publishing, Ltd. 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-ba32d2cf34e125e1d706bfd293d761d93905c2c9b2bbb54cfb4303859f3d24e63</citedby><cites>FETCH-LOGICAL-c355t-ba32d2cf34e125e1d706bfd293d761d93905c2c9b2bbb54cfb4303859f3d24e63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782620010157$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782620010157$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Mikhaylov, A. I.</creatorcontrib><creatorcontrib>Afanasyev, A. V.</creatorcontrib><creatorcontrib>Ilyin, V. A.</creatorcontrib><creatorcontrib>Luchinin, V. V.</creatorcontrib><creatorcontrib>Reshanov, S. A.</creatorcontrib><creatorcontrib>Schöner, A.</creatorcontrib><title>High-Power 4H-SiC MOSFET with an Epitaxial Buried Channel</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>A method for reducing the on-state resistance of a high-power 4
H
-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) by forming a buried channel via the growth of epitaxial layers on the surface of the heavily doped
p
-region is proposed. The features of the carrier transport in the epitaxial buried channel are considered in comparison with that fabricated by conventional technology. A more than threefold decrease in the resistance of the high-power MOSFET is achieved.</description><subject>Carrier transport</subject><subject>Epitaxial growth</subject><subject>Epitaxial layers</subject><subject>Epitaxy</subject><subject>Field effect transistors</subject><subject>Integrated circuits</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Metal oxide semiconductor field effect transistors</subject><subject>MOSFETs</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Physics of Semiconductor Devices</subject><subject>Semiconductor chips</subject><subject>Semiconductor devices</subject><subject>Silicon carbide</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEQhoMoWKs_wFvAc2q-tznWpVqhUqF6XrL5aFO2uzW7S_Xfm7KCB5E5zDDzPjPJC8AtwRNCGL9fEyxZNqWSYkwwEdkZGBGsMJI8U-enWjJ0ml-Cq7bdJRGZCj4CahE2W_TaHF2EfIHWIYcvq_Xj_A0eQ7eFuobzQ-j0Z9AVfOhjcBbmW13XrroGF15Xrbv5yWPwnrB8gZarp-d8tkSGCdGhUjNqqfGMO0KFIzbDsvSWKmYzSaxiCgtDjSppWZaCG19yhtlUKM8s5U6yMbgb9h5i89G7tit2TR_rdLKgLMNCpH_QpJoMqo2uXBFq33RRmxTW7YNpaudD6s8kSQZlnOMEkAEwsWnb6HxxiGGv41dBcHGytPhjaWLowLRJW29c_H3K_9A3OqF0JA</recordid><startdate>2020</startdate><enddate>2020</enddate><creator>Mikhaylov, A. I.</creator><creator>Afanasyev, A. V.</creator><creator>Ilyin, V. A.</creator><creator>Luchinin, V. V.</creator><creator>Reshanov, S. A.</creator><creator>Schöner, A.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2020</creationdate><title>High-Power 4H-SiC MOSFET with an Epitaxial Buried Channel</title><author>Mikhaylov, A. I. ; Afanasyev, A. V. ; Ilyin, V. A. ; Luchinin, V. V. ; Reshanov, S. A. ; Schöner, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-ba32d2cf34e125e1d706bfd293d761d93905c2c9b2bbb54cfb4303859f3d24e63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Carrier transport</topic><topic>Epitaxial growth</topic><topic>Epitaxial layers</topic><topic>Epitaxy</topic><topic>Field effect transistors</topic><topic>Integrated circuits</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Metal oxide semiconductor field effect transistors</topic><topic>MOSFETs</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Physics of Semiconductor Devices</topic><topic>Semiconductor chips</topic><topic>Semiconductor devices</topic><topic>Silicon carbide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mikhaylov, A. I.</creatorcontrib><creatorcontrib>Afanasyev, A. V.</creatorcontrib><creatorcontrib>Ilyin, V. A.</creatorcontrib><creatorcontrib>Luchinin, V. V.</creatorcontrib><creatorcontrib>Reshanov, S. A.</creatorcontrib><creatorcontrib>Schöner, A.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mikhaylov, A. I.</au><au>Afanasyev, A. V.</au><au>Ilyin, V. A.</au><au>Luchinin, V. V.</au><au>Reshanov, S. A.</au><au>Schöner, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Power 4H-SiC MOSFET with an Epitaxial Buried Channel</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2020</date><risdate>2020</risdate><volume>54</volume><issue>1</issue><spage>122</spage><epage>126</epage><pages>122-126</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>A method for reducing the on-state resistance of a high-power 4
H
-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) by forming a buried channel via the growth of epitaxial layers on the surface of the heavily doped
p
-region is proposed. The features of the carrier transport in the epitaxial buried channel are considered in comparison with that fabricated by conventional technology. A more than threefold decrease in the resistance of the high-power MOSFET is achieved.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782620010157</doi><tpages>5</tpages></addata></record> |
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| ispartof | Semiconductors (Woodbury, N.Y.), 2020, Vol.54 (1), p.122-126 |
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| source | Springer Nature - Complete Springer Journals |
| subjects | Carrier transport Epitaxial growth Epitaxial layers Epitaxy Field effect transistors Integrated circuits Magnetic Materials Magnetism Metal oxide semiconductor field effect transistors MOSFETs Physics Physics and Astronomy Physics of Semiconductor Devices Semiconductor chips Semiconductor devices Silicon carbide |
| title | High-Power 4H-SiC MOSFET with an Epitaxial Buried Channel |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T06%3A33%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_proqu&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-Power%204H-SiC%20MOSFET%20with%20an%20Epitaxial%20Buried%20Channel&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Mikhaylov,%20A.%20I.&rft.date=2020&rft.volume=54&rft.issue=1&rft.spage=122&rft.epage=126&rft.pages=122-126&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/S1063782620010157&rft_dat=%3Cgale_proqu%3EA616207440%3C/gale_proqu%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2370558542&rft_id=info:pmid/&rft_galeid=A616207440&rfr_iscdi=true |