High-Power 4H-SiC MOSFET with an Epitaxial Buried Channel

A method for reducing the on-state resistance of a high-power 4 H -SiC metal-oxide-semiconductor field-effect transistor (MOSFET) by forming a buried channel via the growth of epitaxial layers on the surface of the heavily doped p -region is proposed. The features of the carrier transport in the epi...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2020, Vol.54 (1), p.122-126
Hauptverfasser:	Mikhaylov, A. I., Afanasyev, A. V., Ilyin, V. A., Luchinin, V. V., Reshanov, S. A., Schöner, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier transport Epitaxial growth Epitaxial layers Epitaxy Field effect transistors Integrated circuits Magnetic Materials Magnetism Metal oxide semiconductor field effect transistors MOSFETs Physics Physics and Astronomy Physics of Semiconductor Devices Semiconductor chips Semiconductor devices Silicon carbide
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Beschreibung
Zusammenfassung:	A method for reducing the on-state resistance of a high-power 4 H -SiC metal-oxide-semiconductor field-effect transistor (MOSFET) by forming a buried channel via the growth of epitaxial layers on the surface of the heavily doped p -region is proposed. The features of the carrier transport in the epitaxial buried channel are considered in comparison with that fabricated by conventional technology. A more than threefold decrease in the resistance of the high-power MOSFET is achieved.
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782620010157