Effect of Magnetic Co–CoO Particles on the Carrier Transport in Monolayer Graphene

Electrodeposition of cobalt on monolayer graphene synthesized by chemical vapor deposition produces Co–CoO/graphene composite structures, which is accompanied by increases in the electrical resistance and magnetoresistance. We show that the observed magnetoresistance effect is caused by two competin...

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Veröffentlicht in:	Physics of the solid state 2020-02, Vol.62 (2), p.368-377
Hauptverfasser:	Fedotova, J. A., Kharchanka, A. A., Fedotov, A. K., Chichkov, M. V., Malinkovich, M. D., Konakov, A. O., Vorobyova, S. A., Kasiuk, J. V., Gumiennik, U. E., Kula, M., Mitura-Nowak, M., Maximenko, A. A., Przewoźnik, J., Kapusta, Cz
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier transport Chemical synthesis Chemical vapor deposition Cobalt Composite structures Electrical resistivity Electrochemical reactions Graphene Graphenes Graphite Magnetic fields Magnetism Magnetoresistance Magnetoresistivity Monolayers NMR Nuclear magnetic resonance Organic chemistry Physics Physics and Astronomy Solid State Physics
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Zusammenfassung:	Electrodeposition of cobalt on monolayer graphene synthesized by chemical vapor deposition produces Co–CoO/graphene composite structures, which is accompanied by increases in the electrical resistance and magnetoresistance. We show that the observed magnetoresistance effect is caused by two competing contributions: negative (NMR) and positive (PMR) magnetoresistance. In weak magnetic fields, the NMR is described by quantum localization correction to the Drude model of conductivity in graphene. The enhancement of PMR observed in strong magnetic fields is related to the Lorentz mechanism in Co–CoO particles.
ISSN:	1063-7834 1090-6460
DOI:	10.1134/S1063783420020134