GaN Selective Epitaxy in Sub-Micron Windows with Different Depths Formed by Ion Beam Nanolithography

GaN Selective Epitaxy in Sub-Micron Windows with Different Depths Formed by Ion Beam Nanolithography

A significant difference in the growth mechanism of spatially closed structures of gallium nitride during selective growth in submicron windows with and without penetration into the GaN sublayer was demonstrated. The mechanisms of generation and development of dislocations, their role in the formati...

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Veröffentlicht in:Physics of the solid state 2019-12, Vol.61 (12), p.2335-2337
Hauptverfasser: Rodin, S. N., Lundin, W. V., Tsatsulnikov, A. F., Sakharov, A. V., Usov, S. O., Mitrofanov, M. I., Levitskii, I. V., Evtikhiev, V. P., Kaliteevski, M. A.
Format: Artikel
Sprache:eng
Schlagworte:
Epitaxy
Gallium nitrate
Gallium nitrides
Ion beams
Liquors
Nanolithography
Nitrides
Physics
Physics and Astronomy
Semiconductors
Solid State Physics
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Zusammenfassung:A significant difference in the growth mechanism of spatially closed structures of gallium nitride during selective growth in submicron windows with and without penetration into the GaN sublayer was demonstrated. The mechanisms of generation and development of dislocations, their role in the formation of self-organizing coaxial structures were modeled.
ISSN:1063-7834
1090-6460
DOI:10.1134/S106378341912045X