Compact laser diode array based on epitaxially integrated AlGaAs/GaAs heterostructures

The main results of the development of compact laser diode mini-arrays operating under 875-nm pulsed pumping are presented and the instrumental characteristics of these arrays are studied. Specific features of these sources, in addition to a high output power (∼1.5 kW), are a narrow directional patt...

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Veröffentlicht in:	Quantum electronics (Woodbury, N.Y.) N.Y.), 2018-12, Vol.48 (11), p.993-995
Hauptverfasser:	Ladugin, M.A., Bagaev, T.A., Marmalyuk, A.A., Koval', Yu.P., Konyaev, V.P., Sapozhnikov, S.M., Lobintsov, A.V., Simakov, V.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINIUM ARSENIDES Aluminum gallium arsenides Arrays CHEMICAL VAPOR DEPOSITION CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY EPITAXY Gallium arsenide GALLIUM ARSENIDES Heterostructures integrated heterostructure Laser arrays laser diode array LASERS MOCVD PULSES PUMPING Semiconductor lasers
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