Compact laser diode array based on epitaxially integrated AlGaAs/GaAs heterostructures

Compact laser diode array based on epitaxially integrated AlGaAs/GaAs heterostructures

The main results of the development of compact laser diode mini-arrays operating under 875-nm pulsed pumping are presented and the instrumental characteristics of these arrays are studied. Specific features of these sources, in addition to a high output power (∼1.5 kW), are a narrow directional patt...

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Veröffentlicht in:Quantum electronics (Woodbury, N.Y.) N.Y.), 2018-12, Vol.48 (11), p.993-995
Hauptverfasser: Ladugin, M.A., Bagaev, T.A., Marmalyuk, A.A., Koval', Yu.P., Konyaev, V.P., Sapozhnikov, S.M., Lobintsov, A.V., Simakov, V.A.
Format: Artikel
Sprache:eng
Schlagworte:
ALUMINIUM ARSENIDES
Aluminum gallium arsenides
Arrays
CHEMICAL VAPOR DEPOSITION
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
EPITAXY
Gallium arsenide
GALLIUM ARSENIDES
Heterostructures
integrated heterostructure
Laser arrays
laser diode array
LASERS
MOCVD
PULSES
PUMPING
Semiconductor lasers
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Beschreibung
Zusammenfassung:The main results of the development of compact laser diode mini-arrays operating under 875-nm pulsed pumping are presented and the instrumental characteristics of these arrays are studied. Specific features of these sources, in addition to a high output power (∼1.5 kW), are a narrow directional pattern (angular divergence 21° × 8°) and a small emitting area (less than 1 mm2). The use of serially integrated AlGaAs/GaAs MOCVD heterostructures with three emitting regions to develop laser diode arrays allowed us to improve their working parameters.
ISSN:1063-7818
1468-4799
DOI:10.1070/QEL16812