Turning free-standing three-dimensional graphene into electrochemically active by nitrogen doping during chemical vapor deposition process
By chemical vapor deposition on nanometer-size copper nanopowder sinter template with ammonia as nitrogen source, a free-standing N-doped three-dimensional graphene (N3DG) with macro–meso–micro-hierarchical porous structure was prepared. The existence of nitrogen-containing groups in N3DG turned ine...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2020-03, Vol.31 (5), p.3759-3768 |
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| container_issue | 5 |
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| container_title | Journal of materials science. Materials in electronics |
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| creator | Ma, Yuxiao Wu, Xueke Yu, Mei Li, Songmei Liu, Jianhua |
| description | By chemical vapor deposition on nanometer-size copper nanopowder sinter template with ammonia as nitrogen source, a free-standing N-doped three-dimensional graphene (N3DG) with macro–meso–micro-hierarchical porous structure was prepared. The existence of nitrogen-containing groups in N3DG turned inert graphene into electrochemically active. The flow ratio between methane and ammonia significantly influences the chemical environment of as-doped nitrogen atoms, the structure of defects in graphene, as well as the electrochemical performance. With the flow ratio between methane and ammonia of 1:4, the specific capacitance of N3DG could be as high as 558.9 F g
− 1
. The areal capacitance is 4.26 F m
− 2
. |
| doi_str_mv | 10.1007/s10854-019-02740-9 |
| format | Article |
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− 1
. The areal capacitance is 4.26 F m
− 2
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− 1
. The areal capacitance is 4.26 F m
− 2
.</description><subject>Ammonia</subject><subject>Atomic structure</subject><subject>Capacitance</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemical vapor deposition</subject><subject>Chemistry and Materials Science</subject><subject>Electrochemical analysis</subject><subject>Graphene</subject><subject>Materials Science</subject><subject>Methane</subject><subject>Nitrogen</subject><subject>Nitrogen atoms</subject><subject>Optical and Electronic Materials</subject><subject>Organic chemistry</subject><subject>Structural hierarchy</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp9kMtKxDAUhoMoOF5ewFXAdfTk1jZLGbzBgBsFd6HTnM5EOmlNOsK8gk9t6ijuXB0O-f_vkI-QCw5XHKC8ThwqrRhww0CUCpg5IDOuS8lUJV4PyQyMLpnSQhyTk5TeAKBQspqRz-dtDD6saBsRWRrr4KZtXE-r8xsMyfeh7ugq1sMaA1Ifxp5ih80Y-2aNG9_UXbejdTP6D6TLHQ0-v6wwUNcPE8tt4zR-s_SjHvpIHQ598mOG0yGDMKUzctTWXcLzn3lKXu5un-cPbPF0_zi_WbBGcjMywTXyFqUplAEDUjXFUlQoHDRSV9yp1klQEtyyKlTLUaJ2pUaDplSFaZU8JZd7br77vsU02rc-S8gnrZC6qLgBznNK7FNN7FOK2Noh-k0dd5aDnZzbvXObndtv59bkktyX0jD9GeMf-p_WFxLWh8Y</recordid><startdate>20200301</startdate><enddate>20200301</enddate><creator>Ma, Yuxiao</creator><creator>Wu, Xueke</creator><creator>Yu, Mei</creator><creator>Li, Songmei</creator><creator>Liu, Jianhua</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><orcidid>https://orcid.org/0000-0001-7719-1413</orcidid></search><sort><creationdate>20200301</creationdate><title>Turning free-standing three-dimensional graphene into electrochemically active by nitrogen doping during chemical vapor deposition process</title><author>Ma, Yuxiao ; 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Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2020-03-01</date><risdate>2020</risdate><volume>31</volume><issue>5</issue><spage>3759</spage><epage>3768</epage><pages>3759-3768</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>By chemical vapor deposition on nanometer-size copper nanopowder sinter template with ammonia as nitrogen source, a free-standing N-doped three-dimensional graphene (N3DG) with macro–meso–micro-hierarchical porous structure was prepared. The existence of nitrogen-containing groups in N3DG turned inert graphene into electrochemically active. The flow ratio between methane and ammonia significantly influences the chemical environment of as-doped nitrogen atoms, the structure of defects in graphene, as well as the electrochemical performance. With the flow ratio between methane and ammonia of 1:4, the specific capacitance of N3DG could be as high as 558.9 F g
− 1
. The areal capacitance is 4.26 F m
− 2
.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-019-02740-9</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0001-7719-1413</orcidid></addata></record> |
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| subjects | Ammonia Atomic structure Capacitance Characterization and Evaluation of Materials Chemical vapor deposition Chemistry and Materials Science Electrochemical analysis Graphene Materials Science Methane Nitrogen Nitrogen atoms Optical and Electronic Materials Organic chemistry Structural hierarchy |
| title | Turning free-standing three-dimensional graphene into electrochemically active by nitrogen doping during chemical vapor deposition process |
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