Turning free-standing three-dimensional graphene into electrochemically active by nitrogen doping during chemical vapor deposition process

By chemical vapor deposition on nanometer-size copper nanopowder sinter template with ammonia as nitrogen source, a free-standing N-doped three-dimensional graphene (N3DG) with macro–meso–micro-hierarchical porous structure was prepared. The existence of nitrogen-containing groups in N3DG turned ine...

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Veröffentlicht in:Journal of materials science. Materials in electronics 2020-03, Vol.31 (5), p.3759-3768
Hauptverfasser: Ma, Yuxiao, Wu, Xueke, Yu, Mei, Li, Songmei, Liu, Jianhua
Format: Artikel
Sprache:eng
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Zusammenfassung:By chemical vapor deposition on nanometer-size copper nanopowder sinter template with ammonia as nitrogen source, a free-standing N-doped three-dimensional graphene (N3DG) with macro–meso–micro-hierarchical porous structure was prepared. The existence of nitrogen-containing groups in N3DG turned inert graphene into electrochemically active. The flow ratio between methane and ammonia significantly influences the chemical environment of as-doped nitrogen atoms, the structure of defects in graphene, as well as the electrochemical performance. With the flow ratio between methane and ammonia of 1:4, the specific capacitance of N3DG could be as high as 558.9 F g − 1 . The areal capacitance is 4.26 F m − 2 .
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-019-02740-9