Interface modification of sputtered NiOx as the hole-transporting layer for efficient inverted planar perovskite solar cells
Nickel oxide (NiOx) as a hole-transporting layer (HTL) in perovskite solar cells (PSCs) has been studied extensively in recent years. However, unlike the solution-processed NiOx films, magnetron sputtered NiOx exhibits relatively low conductivity and imperfect band alignment with perovskites, severe...
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| Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2020-01, Vol.8 (6), p.1972-1980 |
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| container_end_page | 1980 |
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| container_issue | 6 |
| container_start_page | 1972 |
| container_title | Journal of materials chemistry. C, Materials for optical and electronic devices |
| container_volume | 8 |
| creator | Zheng, Xiaolu Song, Zhaoning Chen, Zhiliang Sandip Singh Bista Gui, Pengbin Shrestha, Niraj Chen, Cong Li, Chongwen Yin, Xinxing Awni, Rasha A Lei, Hongwei Chen, Tao Ellingson, Randy J Yanfa Yan Guojia Fang |
| description | Nickel oxide (NiOx) as a hole-transporting layer (HTL) in perovskite solar cells (PSCs) has been studied extensively in recent years. However, unlike the solution-processed NiOx films, magnetron sputtered NiOx exhibits relatively low conductivity and imperfect band alignment with perovskites, severely limiting the device performance of PSCs. In this study, a synergistically combined strategy consisting of triple interface treatments – including post-annealing, O2-plasma, and potassium chloride treatments – is employed to modulate the optoelectronic properties of the sputtered NiOx films. Through this approach, we successfully obtained NiOx films with increased carrier density and conductivity, better energy level alignment with the perovskite absorber layer, reduced interface trap density, and improved interfacial charge extraction. PSCs using this modified sputtered NiOx as the HTL deliver a highest stabilized efficiency of 18.7%. Our result offers an alternative method to manipulate sputtered NiOx thin film properties and thereby sheds light on a manufacturing pathway to perovskite solar cells featuring sputtered NiOx HTL. |
| doi_str_mv | 10.1039/c9tc05759e |
| format | Article |
| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_journals_2354045049</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2354045049</sourcerecordid><originalsourceid>FETCH-LOGICAL-g286t-1581e5bd19a5baa8886a7baf78141edd6aebd8f16c3e64c26341b6e0eb829adb3</originalsourceid><addsrcrecordid>eNo9TUtLAzEYDKJg0V78BQHPq8nmsdmjFB-FYi96Lt_ufmlTY7ImaVHwx7ugOJcZZpgZQq44u-FMtLd9W3qmGtXiCZnVTLGqUUKe_utan5N5zns2wXBtdDsj38tQMFnokb7HwVnXQ3Ex0GhpHg9lynCgz279SSHTskO6ix6rkiDkMabiwpZ6-MJEbUwU7dR3GAp14YipTNXRQ4BER0zxmN9cQZqjn4wevc-X5MyCzzj_4wvy-nD_sniqVuvH5eJuVW1ro0vFleGouoG3oDoAY4yGpgPbGC45DoMG7AZjue4FatnXWkjeaWTYmbqFoRMX5Pp3d0zx44C5bPbxkMJ0uamFkkwqJlvxA3lCY4U</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2354045049</pqid></control><display><type>article</type><title>Interface modification of sputtered NiOx as the hole-transporting layer for efficient inverted planar perovskite solar cells</title><source>Royal Society Of Chemistry Journals 2008-</source><creator>Zheng, Xiaolu ; Song, Zhaoning ; Chen, Zhiliang ; Sandip Singh Bista ; Gui, Pengbin ; Shrestha, Niraj ; Chen, Cong ; Li, Chongwen ; Yin, Xinxing ; Awni, Rasha A ; Lei, Hongwei ; Chen, Tao ; Ellingson, Randy J ; Yanfa Yan ; Guojia Fang</creator><creatorcontrib>Zheng, Xiaolu ; Song, Zhaoning ; Chen, Zhiliang ; Sandip Singh Bista ; Gui, Pengbin ; Shrestha, Niraj ; Chen, Cong ; Li, Chongwen ; Yin, Xinxing ; Awni, Rasha A ; Lei, Hongwei ; Chen, Tao ; Ellingson, Randy J ; Yanfa Yan ; Guojia Fang</creatorcontrib><description>Nickel oxide (NiOx) as a hole-transporting layer (HTL) in perovskite solar cells (PSCs) has been studied extensively in recent years. However, unlike the solution-processed NiOx films, magnetron sputtered NiOx exhibits relatively low conductivity and imperfect band alignment with perovskites, severely limiting the device performance of PSCs. In this study, a synergistically combined strategy consisting of triple interface treatments – including post-annealing, O2-plasma, and potassium chloride treatments – is employed to modulate the optoelectronic properties of the sputtered NiOx films. Through this approach, we successfully obtained NiOx films with increased carrier density and conductivity, better energy level alignment with the perovskite absorber layer, reduced interface trap density, and improved interfacial charge extraction. PSCs using this modified sputtered NiOx as the HTL deliver a highest stabilized efficiency of 18.7%. Our result offers an alternative method to manipulate sputtered NiOx thin film properties and thereby sheds light on a manufacturing pathway to perovskite solar cells featuring sputtered NiOx HTL.</description><identifier>ISSN: 2050-7526</identifier><identifier>EISSN: 2050-7534</identifier><identifier>DOI: 10.1039/c9tc05759e</identifier><language>eng</language><publisher>Cambridge: Royal Society of Chemistry</publisher><subject>Alignment ; Carrier density ; Carrier transport ; Energy levels ; Low conductivity ; Optoelectronics ; Perovskites ; Photovoltaic cells ; Potassium chloride ; Solar cells ; Thin films</subject><ispartof>Journal of materials chemistry. C, Materials for optical and electronic devices, 2020-01, Vol.8 (6), p.1972-1980</ispartof><rights>Copyright Royal Society of Chemistry 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27922,27923</link.rule.ids></links><search><creatorcontrib>Zheng, Xiaolu</creatorcontrib><creatorcontrib>Song, Zhaoning</creatorcontrib><creatorcontrib>Chen, Zhiliang</creatorcontrib><creatorcontrib>Sandip Singh Bista</creatorcontrib><creatorcontrib>Gui, Pengbin</creatorcontrib><creatorcontrib>Shrestha, Niraj</creatorcontrib><creatorcontrib>Chen, Cong</creatorcontrib><creatorcontrib>Li, Chongwen</creatorcontrib><creatorcontrib>Yin, Xinxing</creatorcontrib><creatorcontrib>Awni, Rasha A</creatorcontrib><creatorcontrib>Lei, Hongwei</creatorcontrib><creatorcontrib>Chen, Tao</creatorcontrib><creatorcontrib>Ellingson, Randy J</creatorcontrib><creatorcontrib>Yanfa Yan</creatorcontrib><creatorcontrib>Guojia Fang</creatorcontrib><title>Interface modification of sputtered NiOx as the hole-transporting layer for efficient inverted planar perovskite solar cells</title><title>Journal of materials chemistry. C, Materials for optical and electronic devices</title><description>Nickel oxide (NiOx) as a hole-transporting layer (HTL) in perovskite solar cells (PSCs) has been studied extensively in recent years. However, unlike the solution-processed NiOx films, magnetron sputtered NiOx exhibits relatively low conductivity and imperfect band alignment with perovskites, severely limiting the device performance of PSCs. In this study, a synergistically combined strategy consisting of triple interface treatments – including post-annealing, O2-plasma, and potassium chloride treatments – is employed to modulate the optoelectronic properties of the sputtered NiOx films. Through this approach, we successfully obtained NiOx films with increased carrier density and conductivity, better energy level alignment with the perovskite absorber layer, reduced interface trap density, and improved interfacial charge extraction. PSCs using this modified sputtered NiOx as the HTL deliver a highest stabilized efficiency of 18.7%. Our result offers an alternative method to manipulate sputtered NiOx thin film properties and thereby sheds light on a manufacturing pathway to perovskite solar cells featuring sputtered NiOx HTL.</description><subject>Alignment</subject><subject>Carrier density</subject><subject>Carrier transport</subject><subject>Energy levels</subject><subject>Low conductivity</subject><subject>Optoelectronics</subject><subject>Perovskites</subject><subject>Photovoltaic cells</subject><subject>Potassium chloride</subject><subject>Solar cells</subject><subject>Thin films</subject><issn>2050-7526</issn><issn>2050-7534</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNo9TUtLAzEYDKJg0V78BQHPq8nmsdmjFB-FYi96Lt_ufmlTY7ImaVHwx7ugOJcZZpgZQq44u-FMtLd9W3qmGtXiCZnVTLGqUUKe_utan5N5zns2wXBtdDsj38tQMFnokb7HwVnXQ3Ex0GhpHg9lynCgz279SSHTskO6ix6rkiDkMabiwpZ6-MJEbUwU7dR3GAp14YipTNXRQ4BER0zxmN9cQZqjn4wevc-X5MyCzzj_4wvy-nD_sniqVuvH5eJuVW1ro0vFleGouoG3oDoAY4yGpgPbGC45DoMG7AZjue4FatnXWkjeaWTYmbqFoRMX5Pp3d0zx44C5bPbxkMJ0uamFkkwqJlvxA3lCY4U</recordid><startdate>20200101</startdate><enddate>20200101</enddate><creator>Zheng, Xiaolu</creator><creator>Song, Zhaoning</creator><creator>Chen, Zhiliang</creator><creator>Sandip Singh Bista</creator><creator>Gui, Pengbin</creator><creator>Shrestha, Niraj</creator><creator>Chen, Cong</creator><creator>Li, Chongwen</creator><creator>Yin, Xinxing</creator><creator>Awni, Rasha A</creator><creator>Lei, Hongwei</creator><creator>Chen, Tao</creator><creator>Ellingson, Randy J</creator><creator>Yanfa Yan</creator><creator>Guojia Fang</creator><general>Royal Society of Chemistry</general><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20200101</creationdate><title>Interface modification of sputtered NiOx as the hole-transporting layer for efficient inverted planar perovskite solar cells</title><author>Zheng, Xiaolu ; Song, Zhaoning ; Chen, Zhiliang ; Sandip Singh Bista ; Gui, Pengbin ; Shrestha, Niraj ; Chen, Cong ; Li, Chongwen ; Yin, Xinxing ; Awni, Rasha A ; Lei, Hongwei ; Chen, Tao ; Ellingson, Randy J ; Yanfa Yan ; Guojia Fang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-g286t-1581e5bd19a5baa8886a7baf78141edd6aebd8f16c3e64c26341b6e0eb829adb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Alignment</topic><topic>Carrier density</topic><topic>Carrier transport</topic><topic>Energy levels</topic><topic>Low conductivity</topic><topic>Optoelectronics</topic><topic>Perovskites</topic><topic>Photovoltaic cells</topic><topic>Potassium chloride</topic><topic>Solar cells</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zheng, Xiaolu</creatorcontrib><creatorcontrib>Song, Zhaoning</creatorcontrib><creatorcontrib>Chen, Zhiliang</creatorcontrib><creatorcontrib>Sandip Singh Bista</creatorcontrib><creatorcontrib>Gui, Pengbin</creatorcontrib><creatorcontrib>Shrestha, Niraj</creatorcontrib><creatorcontrib>Chen, Cong</creatorcontrib><creatorcontrib>Li, Chongwen</creatorcontrib><creatorcontrib>Yin, Xinxing</creatorcontrib><creatorcontrib>Awni, Rasha A</creatorcontrib><creatorcontrib>Lei, Hongwei</creatorcontrib><creatorcontrib>Chen, Tao</creatorcontrib><creatorcontrib>Ellingson, Randy J</creatorcontrib><creatorcontrib>Yanfa Yan</creatorcontrib><creatorcontrib>Guojia Fang</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zheng, Xiaolu</au><au>Song, Zhaoning</au><au>Chen, Zhiliang</au><au>Sandip Singh Bista</au><au>Gui, Pengbin</au><au>Shrestha, Niraj</au><au>Chen, Cong</au><au>Li, Chongwen</au><au>Yin, Xinxing</au><au>Awni, Rasha A</au><au>Lei, Hongwei</au><au>Chen, Tao</au><au>Ellingson, Randy J</au><au>Yanfa Yan</au><au>Guojia Fang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Interface modification of sputtered NiOx as the hole-transporting layer for efficient inverted planar perovskite solar cells</atitle><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle><date>2020-01-01</date><risdate>2020</risdate><volume>8</volume><issue>6</issue><spage>1972</spage><epage>1980</epage><pages>1972-1980</pages><issn>2050-7526</issn><eissn>2050-7534</eissn><abstract>Nickel oxide (NiOx) as a hole-transporting layer (HTL) in perovskite solar cells (PSCs) has been studied extensively in recent years. However, unlike the solution-processed NiOx films, magnetron sputtered NiOx exhibits relatively low conductivity and imperfect band alignment with perovskites, severely limiting the device performance of PSCs. In this study, a synergistically combined strategy consisting of triple interface treatments – including post-annealing, O2-plasma, and potassium chloride treatments – is employed to modulate the optoelectronic properties of the sputtered NiOx films. Through this approach, we successfully obtained NiOx films with increased carrier density and conductivity, better energy level alignment with the perovskite absorber layer, reduced interface trap density, and improved interfacial charge extraction. PSCs using this modified sputtered NiOx as the HTL deliver a highest stabilized efficiency of 18.7%. Our result offers an alternative method to manipulate sputtered NiOx thin film properties and thereby sheds light on a manufacturing pathway to perovskite solar cells featuring sputtered NiOx HTL.</abstract><cop>Cambridge</cop><pub>Royal Society of Chemistry</pub><doi>10.1039/c9tc05759e</doi><tpages>9</tpages></addata></record> |
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| identifier | ISSN: 2050-7526 |
| ispartof | Journal of materials chemistry. C, Materials for optical and electronic devices, 2020-01, Vol.8 (6), p.1972-1980 |
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| language | eng |
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| source | Royal Society Of Chemistry Journals 2008- |
| subjects | Alignment Carrier density Carrier transport Energy levels Low conductivity Optoelectronics Perovskites Photovoltaic cells Potassium chloride Solar cells Thin films |
| title | Interface modification of sputtered NiOx as the hole-transporting layer for efficient inverted planar perovskite solar cells |
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