High-performance dual-gate-charge-plasma-AlGaN/GaN MIS-HEMT

This paper presents a novel structure of dual-gate-charge-plasma (DG-CP) AlGaN/GaN metal–insulator–semiconductor high electron mobility transistor (MIS-DG-CP-HEMT) with gate oxides employing Al 2 O 3 . AlN as an interfacial layer between dielectric and semiconductor. Dual-gate technique for both CP and doped HEMT is used to improve the transport characteristics in the channel. CP-HEMT is used to enhance the conductance charge density and electron concentration at the interface of AlGaN and GaN. The DG-CP-HEMT is compared with DG-doped HEMT. The dual-gate structure helps in incorporating the two different layers of 2-dimensional electron gas (2DEG) for higher current density. Results showed a better performance of DG-CP-HEMT in term of various analog and RF parameters. HEMT gives better transconductance (29 mS), Cutoff frequency (11 GHz) and ON-state-to-OFF-state current ratio (10 11 ), ON-resistance (6 Ω-cm 2 ) and subthreshold slope (63 mV/dec). The proposed HEMT architecture can be used for RF applications due to its exemplary characteristics.