Double-Layer Cross-Coupled Silicon Nitride Multi-Ring Resonator Systems

We demonstrate a double-layer Si 3 N 4 multi-ring resonator system, where an S-bend waveguide is cross-coupled with a ring cavity loaded with two sub-ring resonators. The device performance is analyzed by using the transfer matrix method. The alignment-error-induced device performance variations are...

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Veröffentlicht in:IEEE photonics technology letters 2020-03, Vol.32 (5), p.227-230
Hauptverfasser: Pan, J., Zhai, S., Feng, J., Shi, M., Zhou, L., Cong, G., Akimoto, R., Zeng, H.
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Sprache:eng
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Zusammenfassung:We demonstrate a double-layer Si 3 N 4 multi-ring resonator system, where an S-bend waveguide is cross-coupled with a ring cavity loaded with two sub-ring resonators. The device performance is analyzed by using the transfer matrix method. The alignment-error-induced device performance variations are also discussed. The measured spectra coincide well with the simulated results. The device has high tuning flexibility and more design freedom with two sub-rings placed above the ring cavity. The spectrum profile can also be tuned by changing the cross-coupling coefficient. A heater placed above the resonator can shift the resonant wavelength effectively.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2020.2968291