Enhanced ferroelectric properties of BaTiO3 films via rapid thermal processing

Single-crystal BaTiO 3 (BTO) films were prepared by pulsed laser deposition (PLD) on (100) SrRuO 3 (SRO) buffered SrTiO 3 (STO) substrates, which were treated by rapid thermal processing (RTP) in the temperature range of 600–750 ∘ C . The XRD, Ferroelectric test system, Hall effect Test Station and...

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Veröffentlicht in:Journal of materials science. Materials in electronics 2020-02, Vol.31 (4), p.3130-3136
Hauptverfasser: Zhang, Min, Deng, Chaoyong
Format: Artikel
Sprache:eng
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Zusammenfassung:Single-crystal BaTiO 3 (BTO) films were prepared by pulsed laser deposition (PLD) on (100) SrRuO 3 (SRO) buffered SrTiO 3 (STO) substrates, which were treated by rapid thermal processing (RTP) in the temperature range of 600–750 ∘ C . The XRD, Ferroelectric test system, Hall effect Test Station and current–voltage (I–V) characteristics were used to study microstructure and electrical properties. The results show that the RTP temperature can affect the microstructure of films, the contact of the interfaces and ferroelectric properties. The films exhibit small leakage current, resistance, barrier height, and better ferroelectric properties treated by RTP at 650 ∘ C .
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-020-02859-0