Electrical Properties of Sn‐Doped α‐Ga2O3 Films on m‐Plane Sapphire Substrates Grown by Mist Chemical Vapor Deposition

Growth and electrical property of conductive Sn‐doped α‐Ga2O3 films on m‐plane sapphire by mist chemical vapor deposition (mist‐CVD) are exhibited. Although the crystallinity is still inferior in comparison with previously reported α‐Ga2O3 films on c‐plane sapphire, highly crystalline α‐Ga2O3 films on m‐plane sapphire substrates are grown by applying two‐step growth procedure. Carrier concentration of Sn‐doped α‐Ga2O3 films is controlled in the range of 1017–1019 cm−3 by changing the Sn/Ga concentration ratio in source solution. α‐Ga2O3 films on m‐plane sapphires with the thickness of 2 μm show mobilities as high as 65 cm2 (V s)−1, which is much higher than previously reported value of 24 cm2 (V s)−1 in the films grown on c‐plane sapphire. Growth and electrical property of conductive Sn‐doped α‐Ga2O3 films on m‐plane sapphire by mist chemical vapor deposition (mist‐CVD) are exhibited. α‐Ga2O3 films on m‐plane sapphires with the thickness of 2 μm show mobility as high as 65 cm2 (V s)−1, which is much higher than previously reported value of 24 cm2 (V s)−1 in the films grown on c‐plane sapphire.