Hydride Vapor‐Phase Epitaxy Reactor for Bulk GaN Growth

An hydride vapor‐phase epitaxy reactor for the growth of bulk GaN crystals with a diameter of 50 mm is developed. Growth rate nonuniformity of 1% is achieved using an axisymmetric vertical gas injector with stagnation point flow. Chemically resistant refractory materials are used instead of quartz i...

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Veröffentlicht in:Physica status solidi. A, Applications and materials science Applications and materials science, 2020-02, Vol.217 (3), p.n/a
Hauptverfasser: Voronenkov, Vladislav, Bochkareva, Natalia, Zubrilov, Andrey, Lelikov, Yuri, Gorbunov, Ruslan, Latyshev, Philipp, Shreter, Yuri
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Sprache:eng
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Zusammenfassung:An hydride vapor‐phase epitaxy reactor for the growth of bulk GaN crystals with a diameter of 50 mm is developed. Growth rate nonuniformity of 1% is achieved using an axisymmetric vertical gas injector with stagnation point flow. Chemically resistant refractory materials are used instead of quartz in the reactor hot zone. High‐capacity external gallium precursor sources are developed for the nonstop growth of the bulk GaN layers. A load‐lock vacuum chamber and a dry in situ growth chamber cleaning are implemented to improve the growth process reproducibility. Freestanding GaN crystals with a diameter of 50 mm are grown with the reactor. Designing a hydride vapor‐phase epitaxy reactor for bulk GaN growth is a challenging task where issues of chemical resistance, uniformity, repeatability, and long nonstop growth should be addressed. A quartz‐free reactor with external precursor sources and a vacuum load‐lock chamber is developed and tested in operation with more than a thousand growth processes performed.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201900629