Demonstration of a GaN/AlGaN Superlattice-Based p-Channel FinFET With High ON-Current

In this letter, we report on the demonstration of a Mg-doped GaN/Al 0.2 Ga 0.8 N superlattice (SL) based depletion mode p-channel FinFET to improve the on current (I ON ). A two-step approach involving a dry etch followed by a Tetramethylammonium hydroxide (TMAH) wet etch was employed to obtain fins with minimum width of 50 nm using optical lithography. Normalizing current with fin height, an I ON of 52 mA/mm and 110 mA/mm were achieved for 80 and 105 nm wide fins respectively.