Indium Aluminum Zinc Oxide Phototransistor With HfO2 Dielectric Layer Through Atomic Layer Deposition

Bottom-gate indium aluminum zinc oxide thin-film transistors (TFTs) are fabricated with a HfO 2 dielectric layer using plasma enhanced atomic layer deposition (PEALD). The electrical properties and photoresponse are both affected by the method of post annealing. A device that is annealed at a temper...

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