Indium Aluminum Zinc Oxide Phototransistor With HfO2 Dielectric Layer Through Atomic Layer Deposition

Bottom-gate indium aluminum zinc oxide thin-film transistors (TFTs) are fabricated with a HfO 2 dielectric layer using plasma enhanced atomic layer deposition (PEALD). The electrical properties and photoresponse are both affected by the method of post annealing. A device that is annealed at a temper...

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Veröffentlicht in:IEEE sensors journal 2020-02, Vol.20 (4), p.1838-1842
Hauptverfasser: Cheng, T. H., Chang, S. P., Cheng, Y. C., Chang, S. J.
Format: Artikel
Sprache:eng
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Zusammenfassung:Bottom-gate indium aluminum zinc oxide thin-film transistors (TFTs) are fabricated with a HfO 2 dielectric layer using plasma enhanced atomic layer deposition (PEALD). The electrical properties and photoresponse are both affected by the method of post annealing. A device that is annealed at a temperature of less than 200°C has a better Ion/Ioff of 1.71\times 10^{{8}} and a lower subthreshold swing (S.S.) of only 0.21 V/dec. This demonstrates that proper annealing treatment increases the performance of the device. The photoresponse is also calculated. A TFT that is not annealed has a poor photoresponse and a lower rejection ratio. Annealing at a temperature of less than 200 °C gives a good photoresponse of 0.2 A/W and a high rejection ratio of 2.86\times 10^{{5}} . An IAZO TFT with a HfO 2 dielectric layer that is deposited using PEALD is applicable in UV sensing technology.
ISSN:1530-437X
1558-1748
DOI:10.1109/JSEN.2019.2949907