Indium Aluminum Zinc Oxide Phototransistor With HfO2 Dielectric Layer Through Atomic Layer Deposition
Bottom-gate indium aluminum zinc oxide thin-film transistors (TFTs) are fabricated with a HfO 2 dielectric layer using plasma enhanced atomic layer deposition (PEALD). The electrical properties and photoresponse are both affected by the method of post annealing. A device that is annealed at a temper...
Gespeichert in:
Veröffentlicht in: | IEEE sensors journal 2020-02, Vol.20 (4), p.1838-1842 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Bottom-gate indium aluminum zinc oxide thin-film transistors (TFTs) are fabricated with a HfO 2 dielectric layer using plasma enhanced atomic layer deposition (PEALD). The electrical properties and photoresponse are both affected by the method of post annealing. A device that is annealed at a temperature of less than 200°C has a better Ion/Ioff of 1.71\times 10^{{8}} and a lower subthreshold swing (S.S.) of only 0.21 V/dec. This demonstrates that proper annealing treatment increases the performance of the device. The photoresponse is also calculated. A TFT that is not annealed has a poor photoresponse and a lower rejection ratio. Annealing at a temperature of less than 200 °C gives a good photoresponse of 0.2 A/W and a high rejection ratio of 2.86\times 10^{{5}} . An IAZO TFT with a HfO 2 dielectric layer that is deposited using PEALD is applicable in UV sensing technology. |
---|---|
ISSN: | 1530-437X 1558-1748 |
DOI: | 10.1109/JSEN.2019.2949907 |