Dopant-free F-substituted benzodithiophene copolymer hole-transporting materials for efficient and stable perovskite solar cells
Polymeric hole-transporting materials (HTMs) with low production cost and versatile wet processing procedures are important for efficient and stable perovskite solar cells. In this study, three F-substituted benzodithiophene copolymers were introduced in perovskite solar cells as dopant-free efficie...
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Veröffentlicht in: | Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2020, Vol.8 (4), p.1858-1864 |
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Hauptverfasser: | , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Polymeric hole-transporting materials (HTMs) with low production cost and versatile wet processing procedures are important for efficient and stable perovskite solar cells. In this study, three F-substituted benzodithiophene copolymers were introduced in perovskite solar cells as dopant-free efficient HTMs. Among them, perovskite solar cells based on dopant-free PBDT[2F]T achieved a comparable power conversion efficiency (PCE) (17.52%) to that of the well-known p-type doped spiro-OMeTAD (20.2%). More importantly, the solar cells with pristine PBDT[2F]T HTMs presented impressive stability in contrast to that with doped spiro-OMeTAD as the HTM in ambient atmosphere and even in high humidity. The detailed study showed that the dopant-free PBDT[2F]T HTM presents exceptional ability to extract holes from the perovskite layer, and simultaneously the capability to reduce trap-assisted recombination at the interface of perovskite/PBDT[2F]T. These findings pave the way for the development of dopant-free polymeric HTMs for the fabrication of cost-effective and stable perovskite solar cells.
Perovskite solar cells based on dopant-free PBDT[2F]T have achieved a power conversion efficiency (17.52%), combined with an impressive stability in contrast to that with the doped spiro-OMeTAD as a HTM in ambient atmosphere and even in high humidity. |
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ISSN: | 2050-7488 2050-7496 |
DOI: | 10.1039/c9ta11744j |