80-GHz Bandwidth and 1.5-V Vπ InP-Based IQ Modulator

80-GHz Bandwidth and 1.5-V Vπ InP-Based IQ Modulator

We report a promising IQ optical modulator for beyond 100-GBd transmitter. By introducing both a new n-i-p-n heterostructure and an optimized capacitance-loaded traveling-wave electrode (CL-TWE), high-frequency electrical losses of the modulator can be drastically reduced. As a result, we extended a...

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Veröffentlicht in:Journal of lightwave technology 2020-01, Vol.38 (2), p.249-255
Hauptverfasser: Ogiso, Yoshihiro, Hashizume, Yasuaki, Tanobe, Hiromasa, Nunoya, Nobuhiro, Ida, Minoru, Miyamoto, Yutaka, Ishikawa, Mitsuteru, Ozaki, Josuke, Ueda, Yuta, Wakita, Hitoshi, Nagatani, Munehiko, Yamazaki, Hiroshi, Nakamura, Masanori, Kobayashi, Takayuki, Kanazawa, Shigeru
Format: Artikel
Sprache:eng
Schlagworte:
Bandwidth
Broadband
Electrooptic modulators
Heterostructures
High-speed optical modulators
indium compounds
Indium phosphides
Integrated circuits
Integrated optics
Mach-Zehnder modulators
Optical properties
Optical transmitters
semiconductor waveguide
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Zusammenfassung:We report a promising IQ optical modulator for beyond 100-GBd transmitter. By introducing both a new n-i-p-n heterostructure and an optimized capacitance-loaded traveling-wave electrode (CL-TWE), high-frequency electrical losses of the modulator can be drastically reduced. As a result, we extended an electro-optic (EO) bandwidth without degrading other properties, such as half-wave voltage (Vπ) and optical losses. The 3-dB EO bandwidth of the 1.5-V Vπ modulator reaches 80 GHz. Furthermore, we demonstrated up to 128-GBd IQ modulations by co-assembling with an ultra-broadband InP-based driver IC.
ISSN:0733-8724
1558-2213
DOI:10.1109/JLT.2019.2924671