Ion-Beam Deposition of Thin AlN Films on Al2O3 Substrate

Ion-Beam Deposition of Thin AlN Films on Al2O3 Substrate

Thin aluminum nitride (AlN) films on sapphire (Al 2 O 3 ) substrates were grown by means of ion-beam deposition (IBD) and studied by methods of scanning electron microscopy, Raman scattering, and optical transmission spectroscopy. Results revealed the influence of IBD process parameters (gas mixture...

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Veröffentlicht in:Technical physics letters 2019-12, Vol.45 (12), p.1237-1240
Hauptverfasser: Lunin, L. S., Devitskii, O. V., Sysoev, I. A., Pashchenko, A. S., Kas’yanov, I. V., Nikulin, D. A., Irkha, V. A.
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum nitride
Aluminum oxide
Classical and Continuum Physics
Deposition
Gas mixtures
Ion beams
Morphology
Optical properties
Physics
Physics and Astronomy
Process parameters
Raman spectra
Sapphire
Substrates
Thin films
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Beschreibung
Zusammenfassung:Thin aluminum nitride (AlN) films on sapphire (Al 2 O 3 ) substrates were grown by means of ion-beam deposition (IBD) and studied by methods of scanning electron microscopy, Raman scattering, and optical transmission spectroscopy. Results revealed the influence of IBD process parameters (gas mixture composition, ion beam energy, and substrate temperature) on the morphology, structure, and optical properties of obtained thin AlN films on sapphire.
ISSN:1063-7850
1090-6533
DOI:10.1134/S106378501912023X