Terahertz Emission from a Monolayer Tungsten Diselenide Surface

Parameters of terahertz (THz) emission in two-dimensional (2D) tungsten diselenide (WSe 2 ) film grown by chemical vapor deposition from the gas phase have been studied for the first time. The main mechanism of THz radiation generation in this system is established. Dependence of the THz signal ampl...

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Veröffentlicht in:	Technical physics letters 2019-12, Vol.45 (12), p.1262-1265
Hauptverfasser:	Gorbatova, A. V., Khusyainov, D. I., Buryakov, A. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition Classical and Continuum Physics Electric fields Emission Laser pumping Monolayers Organic chemistry Physics Physics and Astronomy Selenides Silicon dioxide Thickness Tungsten compounds Vapor phases
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Beschreibung
Zusammenfassung:	Parameters of terahertz (THz) emission in two-dimensional (2D) tungsten diselenide (WSe 2 ) film grown by chemical vapor deposition from the gas phase have been studied for the first time. The main mechanism of THz radiation generation in this system is established. Dependence of the THz signal amplitude on azimuthal angle in a 2D WSe 2 film has been studied. The distribution of the electric field of laser pumping in the WSe 2 /SiO 2 /Si structure has been calculated as dependent on the thickness of silicon dioxide layer. The choice of optimum structure geometry for effective generation of THz radiation by a WSe 2 monolayer is theoretically substantiated.
ISSN:	1063-7850 1090-6533
DOI:	10.1134/S1063785019120204