Theoretical modeling of XBn T2SLs InAs/InAsSb/B-AlSb longwave infrared detector operating under thermoelectrical cooling

The paper reports on the barrier longwave infrared nBnn + detector based on InAs/InAsSb ( x Sb  = 0.38) type-II superlattice operating under thermoelectrical cooling (> 190 K). That active layer exhibits cut-off wavelength ~ 10 μm at 230 K. AlSb was proved to minimize barrier in valence band in a...

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Veröffentlicht in:Optical and quantum electronics 2020-02, Vol.52 (2), Article 57
Hauptverfasser: Martyniuk, P., Michalczewski, K., Tsai, T. Y., Wu, C. H., Wu, Y. R.
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Sprache:eng
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Zusammenfassung:The paper reports on the barrier longwave infrared nBnn + detector based on InAs/InAsSb ( x Sb  = 0.38) type-II superlattice operating under thermoelectrical cooling (> 190 K). That active layer exhibits cut-off wavelength ~ 10 μm at 230 K. AlSb was proved to minimize barrier in valence band in analysed temperature range and assumed architecture. The highest detectivity of the simulated structure was assessed at the level of ~ 10 9  cm Hz 1/2 /W at T  ~ 230 K assuming immersion contribution. The barrier detector performance was compared to HgCdTe detectors with ~ 10.6 μm cut-off wavelength at 230 K and ~ 13 μm cut-off wavelength at 195 K.
ISSN:0306-8919
1572-817X
DOI:10.1007/s11082-019-2159-3