Facile in situ solution synthesis of SnSe/rGO nanocomposites with enhanced thermoelectric performance

Constructing nanostructured composite architectures has been considered as an effective strategy to reduce the lattice thermal conductivity ( κ L ) and enhance the dimensionless figure of merit ( ZT ) of thermoelectric materials. Herein, a series of SnSe/reduced graphene oxide (rGO)- x ( x = 0.1, 0....

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Veröffentlicht in:Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2020, Vol.8 (3), p.1394-1402
Hauptverfasser: Huang, Lisi, Lu, Jianzhang, Ma, Duowen, Ma, Chunmiao, Zhang, Bin, Wang, Hengyang, Wang, Guoyu, Gregory, Duncan H., Zhou, Xiaoyuan, Han, Guang
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Sprache:eng
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Zusammenfassung:Constructing nanostructured composite architectures has been considered as an effective strategy to reduce the lattice thermal conductivity ( κ L ) and enhance the dimensionless figure of merit ( ZT ) of thermoelectric materials. Herein, a series of SnSe/reduced graphene oxide (rGO)- x ( x = 0.1, 0.3, 0.5, 0.7 wt%) nanocomposites are controllably synthesised in situ via a facile single-step bottom-up solution method, where rGO nanosheets are incorporated intimately into the SnSe matrix. Nanocompositing performs two key functions: (i) significantly reducing the lattice thermal conductivity of the material, which can be attributed to enhanced phonon scattering from high-density SnSe/rGO interfaces, and (ii) improving the electrical conductivity over the low temperature range, as result of an increased carrier concentration. The subsequent thermoelectric performance of SnSe/rGO sintered pellets has been optimised by tuning the rGO mass fraction, with SnSe/rGO-0.3 achieving κ L = 0.36 W m −1 K −1 at 773 K (cutting the κ L of SnSe by 33%) to yield a maximum ZT of 0.91 at 823 K (representing a ∼47% increase compared to SnSe). This study provides a new pathway to improve the thermoelectric performance of polycrystalline SnSe by way of engineering metal chalcogenide/rGO composite architectures at the nanoscale.
ISSN:2050-7488
2050-7496
DOI:10.1039/C9TA11737G