Full-phosphorescence white organic light-emitting diode with high CRI: the exploitation of positive and reverse emitter sequences

The high color rendering index (CRI) and doping-free four-emitting-layer (EML) white orangic light-emitting diode (WOLED) with bipolar spacer layer was researched by different emitter sequence arrangements (positive emitter sequence: B-G-O-R, reverse emitter sequence: R-O-G-B). The resulting four-em...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Optical and quantum electronics 2020, Vol.52 (1), Article 47
Hauptverfasser: Yao, Fangnan, Dai, Xudong, Li, Jun, Cao, Jin
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The high color rendering index (CRI) and doping-free four-emitting-layer (EML) white orangic light-emitting diode (WOLED) with bipolar spacer layer was researched by different emitter sequence arrangements (positive emitter sequence: B-G-O-R, reverse emitter sequence: R-O-G-B). The resulting four-emitting-layer WOLEDs with different sequences show opposite CRI trends when voltage increases, which includes the decreased trend in B-G-O-R sequence and increased trend in R-O-G-B sequence. That leads to WOLEDs with different sequences exhibit the highest CRI at obviously distinguishing luminance, which are CRI of 86 @ 531 cd m −2 in B-G-O-R sequence and CRI of 87 @ 13,340 cd m −2 in R-O-G-B sequence, respectively. Meanwhile, the B-G-O-R and R-O-G-B sequences devices also exhibit a difference in the power efficiency. The different manifestations of CRI and effeciency characteristics are meticulously analyzed by a combined operation of energy transfer mechanism, carrier trap effect and the movement of carrier recombination zone in EML, resulting in a meaningful concept to design high CRI WOLEDs in different application scene.
ISSN:0306-8919
1572-817X
DOI:10.1007/s11082-019-2146-8