Ultra-Low Contact Resistivity of

A robust process for Au-free ohmic contact formation is demonstrated by a direct contact of TixAly alloy film on non-recessed i-AlGaN/GaN. Using this novel TixAly alloy instead of multilayers as contact metals, an ultra-low contact resistivity of [Formula Omitted] mm is achieved for Ti5Al1 alloy on...

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Veröffentlicht in:	IEEE electron device letters 2020-01, Vol.41 (1), p.143
Hauptverfasser:	Meng-Ya Fan, Gai-Ying, Yang, Zhou, Guang-Nan, Jiang, Yang, Wen-Mao, Li, Yu-Long, Jiang, Hong-Yu, Yu
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Contact resistance Electrical resistivity Multilayers
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Beschreibung
Zusammenfassung:	A robust process for Au-free ohmic contact formation is demonstrated by a direct contact of TixAly alloy film on non-recessed i-AlGaN/GaN. Using this novel TixAly alloy instead of multilayers as contact metals, an ultra-low contact resistivity of [Formula Omitted] mm is achieved for Ti5Al1 alloy on i-AlGaN/GaN after 880 °C/60s annealing.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2019.2953077