Magnetoimpedance Effect in a SOI-Based Structure

Magnetoimpedance Effect in a SOI-Based Structure

This paper presents the results of the study the transport properties of the SOI-based structure. Measurements were carried out on an alternating current with an external magnetic field in a wide temperature range. The influence of the magnetic field was found. We associate this effect with the infl...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2019-12, Vol.53 (14), p.1964-1966
Hauptverfasser: Smolyakov, D. A., Tarasov, A. S., Yakovlev, I. A., Volochaev, M. N.
Format: Artikel
Sprache:eng
Schlagworte:
Magnetic fields
Magnetic Materials
Magnetism
Magnetoimpedance
Nanostructure Devices
Physics
Physics and Astronomy
Transport properties
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:This paper presents the results of the study the transport properties of the SOI-based structure. Measurements were carried out on an alternating current with an external magnetic field in a wide temperature range. The influence of the magnetic field was found. We associate this effect with the influence on the surface states located at the interface, this appears as a change of the energy of their levels. This effect is enhanced by the nanoscale of the silicon channel.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782619140215